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United States Patent 5,801,401
Forbes Sept. 1, 1998

Flash memory with microcrystalline silicon carbide film floating gate


A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of microcrystalline silicon carbide particles. The microcrystalline silicon carbide particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.

Inventors: Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 790,603
Filed: Jan. 29, 1997
Intl. Cl. : H01L 29/00
Current U.S. Cl.: 257/77; 257/314; 257/321
Field of Search: 257/77, 314, 321

References Cited | [Referenced By]

U.S. Patent Documents
4,507,673Mar., 1985Aoyama et al. 257/324
5,021,999Jun., 1991Kohda et al. 365/168
5,027,171Jun., 1991Reedy et al. 357/23.5
5,111,430May, 1992Morie 365/185
5,253,196Oct., 1993Shimabukuro 365/45
5,293,560Mar., 1994Harari 365/185
5,317,535May, 1994Talreja et al. 365/185
5,388,069Feb., 1995Kokubo 365/185
5,424,993Jun., 1995Lee et al. 365/218
5,430,670Jul., 1995Rosenthal 365/45
5,434,815Jul., 1995Smarandoiu et al. 365/189.01
5,438,544Aug., 1995Makino 365/185
5,449,941Sept., 1995Yamazaki et al. 257/321
5,467,306Nov., 1995Kaya et al. 365/185.2
5,477,485Dec., 1995Bergemont et al. 365/185.24
5,485,422Jan., 1996Bauer et al. 365/168
5,493,140Feb., 1996Iguchi 257/316
5,508,543Apr., 1996Harstein et al. 257/314
5,627,781May, 1997Hayashi et al. 365/185.2
5,670,790Sept., 1997Katoh et al. 257/14

Foreign Patent Documents
3-222367Oct., 1991JP
6-224431Aug., 1994JP
6-302828Oct., 1994JP
8-255878Oct., 1996JP
Other References

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Primary Examiner: Wallace; Valencia
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner & Kluth, P.A.
10 Claims, 5 Drawing Figures

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