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United States Patent 5,879,996
Forbes Mar. 9, 1999

Silicon-germanium devices for CMOS formed by ion implantation and solid phase epitaxial regrowth


A PMOS transistor is formed in a CMOS integrated circuit, having a Si(1-x) Ge(x) /Si heterojunction between the channel region and the substrate. The method is applicable to large volume CMOS IC fabrication. Germanium is implanted into a silicon substrate, through a gate oxide layer. The substrate is then annealed in a low temperature furnace, to form Si(1-x) Ge(x) in the channel region.

Inventors: Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 717,198
Filed: Sept. 18, 1996
Intl. Cl. : H01L 21/336
Current U.S. Cl.: 438/289; 438/299; 438/528
Field of Search: 438/289, 290, 291, 299, 301, 305, 306, 307, 528, 158

References Cited | [Referenced By]

U.S. Patent Documents
4,394,181Jul., 1983Nicholas 438/298
5,145,794Sept., 1992Kase et al. 438/515
5,254,484Oct., 1993Hefner et al. 438/373
5,298,435Mar., 1994Aronowitz et al. 438/535
5,312,766May, 1994Aronowitz et al. 438/291
5,426,069Jun., 1995Selvakumar et al. 438/60

Foreign Patent Documents
4-34942Feb., 1992JP 438/158
Other References

M. Berti, et al., "Composition and Structure of Si-Ge Layers Produced by Ion Implantation and Laser Melting", J. Mater. Res., vol. 6, No. 10, pp. 2120-2126, Oct. (1991).

M. Berti, et al., "Laser Induced Epitaxial Regrowth of Si(1-x) Ge(x) /Si Layers Produced by Ge Ion Implantation", Appl. Surf. Sci. vol. 43, pp. 158-164, Jan. (1989).

B. T. Chilton, et al., "Solid Phase Epitaxial Regrowth of Strained Si(1-x) Ge(x) /Si Strained-layer Structures Amorphized by Ion Implantation", Appl. Phys. Lett., vol. 54, No. 1, pp. 42-44, Jan. (1989).

Vandebroek, Bernard S. Myerson, et al., "SiGe-Channel Heterojunction p-MOSFET's", IEEE Trans. on Electron Devices, vol. 41, No. 1, pp. 90-100, (Jan. 1994).

D. C. Paine, et al., "The Growth of Strained Si(1-x) Ge(x) Alloys on (100) Silicon Using Solid Phase Epitaxy", J. Mater Re., vol. 5, No. 5, pp. 1023-1031, May (1990).

R. People, et al., "Calculation of critical layer thickness versus Lattice Mismatch for Si(1) -xGe(x) /Si Strained-layer Heterostructures", Appl. Phys. Lett., Aug. (1985), pp. 322-324, Erraltum.

G.A. Garcia et al, "High Quality CMOS in Thin (100nm) Silicon on Sapphire", IEEE Elect. Device Lett, vol. 9, No. 1, pp. 32-34, (Jan. 1988).

D. K. Nayak, K. L. Wang, et al., "High Performance GeSi Quantum-Well PMOS on SIMOX", Proc. Int. Electron Device Meeting, San Francisco, pp. 777-780, (Dec. 1992).

Primary Examiner: Trinh; Michael
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner & Kluth, P.A.
19 Claims, 4 Drawing Figures

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