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United States Patent 5,989,958
Forbes Nov. 23, 1999

Flash memory with microcrystalline silicon carbide film floating gate

Abstract

A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of microcrystalline silicon carbide particles. The microcrystalline silicon carbide particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.


Inventors: Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 136,910
Filed: Aug. 20, 1998

Related U.S. Application Data
Division of Ser No. 790,603, Jan. 29, 1997, Pat. No. 5,801,401.
Intl. Cl. : H01L 21/336, H01L 21/3205
Current U.S. Cl.: 438/257; 438/593; 438/931
Field of Search: 438/257, 258, 259, 260, 261, 264, 201, 211, 593, 594, FOR 203, 931; 148/DIG. 148

References Cited | [Referenced By]

U.S. Patent Documents
4,507,673Mar., 1985Aoyama et al. 357/23.R
5,021,999Jun., 1991Kohda et al. 365/168
5,027,171Jun., 1991Reedy et al. 357/23.5
5,111,430May, 1992Morie 365/185
5,253,196Oct., 1993Shimabukuro 365/45
5,293,560Mar., 1994Harari 365/185
5,317,535May, 1994Talreja et al. 365/185
5,388,069Feb., 1995Kokubo 365/185
5,424,993Jun., 1995Lee et al. 365/218
5,430,670Jul., 1995Rosenthal 365/45
5,434,815Jul., 1995Smarandoiu et al. 365/189.01
5,438,544Aug., 1995Makino 365/185
5,449,941Sept., 1995Yamazaki et al. 257/411
5,467,306Nov., 1995Kaya et al. 365/185.2
5,477,485Dec., 1995Bergemont et al. 365/185.24
5,485,422Jan., 1996Bauer et al. 365/168
5,493,140Feb., 1996Iguchi 257/316
5,508,543Apr., 1996Hartstein et al. 257/314
5,627,781May, 1997Hayashi et al. 365/185.2
5,629,222May, 1997Yamazaki et al. 438/264
5,670,790Sept., 1997Katoh et al. 257/14
5,754,477May, 1998Forbes 365/185.33
5,798,548Aug., 1998Fujiwara 257/319

Foreign Patent Documents
3-222367Oct., 1991JP
6-224431Aug., 1994JP
6-302828Oct., 1994JP
8-255878Oct., 1996JP
Other References

Alok, D., et al., "Electrical Properties of Thermal Oxide Grown on N-type 6H-Silicon Carbide", Applied Physcis Letters, 64, 2845-2846, (May 23, 1994).

Baldwin, G.L., et al., "The Electronic Conduction Mechanism of Hydrogenated Nanocrystalline Silicon Films", Proc. 4th Int. Conf. on Solid-State and Int. Circuit Tech, Beijing, 66-68, (1995).

Bauer, M., et al., "A Multilevel-Cell 32 Mb Flash Memory", Digest IEEE, Solid-State Circuits Conf.,, 440, (1995).

Boeringer, D.W., et al., "Avalanche amplificaiton of multiple resonant tunneling through parallel silicon microcrystallites", Physical Rev. B, 51, 13337-13343, (1995).

Demichelis, F., et al., "Influence of Doping on the Structural and Optoelectronic Properties of Amorphous and Microcrystalline Silicon Carbide", Journal of Applied Physics, 72, 1327-1333, (Aug. 15, 1992).

Demichelis, F., et al., "Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited By PECVD", Materials Research Society Symposium Proceedings, 219, Anaheim, CA, 413-418, (Apr. 30-May 3, 1991).

Dipert, B., et al., "Flash Memory Goes Mainstream", IEEE Spectrum, 30, 48-52, (1993).

Edelberg, E., et al., "Visible Luminescence from Nanocrystalline silicon films produced by plasma enhanced chemical vapor deposition", Appl. Phys. Lett., 68, 1415-1417, (1996).

Hamakawa, Y., et al., "Optoelectronics and Photovoltaic Applications of Microcrystalline SiC", Materials Research Society Symposium Proceedings, 164, Boston, MA, 291-301, (Nov. 29-Dec. 1, 1989).

Hu, G., "Will Flash Memory Replace Hard Disk Drive?", IEEE Electron Devices Meeting, Session 24, (Dec. 13, 1994).

Hybertsen, M.S., "Absorption and Emission of Light in Nanoscale Silicon Structures", Phys. Rev. Lett., 72, 1514-1517, (1994).

Jung, T.S., et al., "A 3.3V, 128Mb Multi-Level NAND Flash Memory for Mass Storage Applications", 1996 IEEE Solid-State Circuits Conf., Digest of Technical Papers, 512, (1996).

Kamata, T., et al., "Substrate Current Due to Impact Ionization in MOS-FET", Japan. J. Appl. Phys., 15, 1127-1134, (Jun. 1976).

Ohkawa, M., et al., "A 98 mm 3.3V 64Mb Flash Memory with FN-NOR type 4-Level Cell", IEEE International Solid-State Circuits Conference, 36-37, (1996).

Prendergast, J., "FLASH or DRAM: Memory Choice for the Future", IEEE Electron Device Meeting, Session 25, Phoenix, AZ, (1995).

Schoenfeld, O., et al., "Formation of Si Quantum dots in Nanocrystalline silicon", Proc. 7th Int. Conf. on Modulated Semiconductor Structures, Madrid, 605-608, (1995).

Shimabukuro, R.L., et al., "Circuitry for Artificial Neural Networks with Non-volatile Analog Memories", IEEE Int'l Symp. on Circuits and Systems, 2, 1217-1220, (1989).

Shimabukuro, R.L., et al., "Dual-Polarity Nonvolatile MOS Analogue Memory (MAM) Cell for Neural-Type Circuitry", Electronics Lett., 24, 1231-1232, (Sep. 15, 1988).

Suh, K.D., et al., "A 3.3 V 32 Mb NAND Flash Memory with Incremental Step Pulse Programming Scheme", IEEE J. Solid-State Circuits, 30, 1149-1156, (Nov. 1995).

Sze, S.M., "Physics of Semiconductor Devices", Wiley-Interscience 2d Ed., New York, 482, (1981).

Takeuchi, K., et al., "A Double-Level-V Select Gate Array Architecture for Multilevel NANAD Flash Memories", IEEE Journal of Solid-State Circuits, 31, 602-609, (Apr. 1996).

Tiwari, S., et al., "A silicon nancrystal based memory", Appl. Physics Lett., 68, 1377-1379, (1996).

Tiwari, S., et al., "Volatile and Non-Volatile Memories in Silicon with Nano-Crystal Storage", Int'l Electron Devices Meeting: Technical Digest, Washington, DC, 521-524, (Dec. 1995).

Tsu, R., et al., "Slow Conductance oscillations in nanoscale silicon clusters of quantum dots", Appl. Phys. Lett., 65, 842-844, (1994).

Tsu, R., et al., "Tunneling in Nanoscale Silicon Particles Embedded in an SiO/sub/2 Matrix", Abstract, IEEE Device Research Conference, 178-179, (1996).

Ye, Q., et al., "Resonant Tunneling via Microcrystalline-silicon quantum confinement", Physical Rev. B, 44, 1806-1811, (1991).

Yih, C.M., et al., "A Consistent Gate and Substrate Current Model for Sub-Micron MOSFET'S by Considering Energy Transport", Int'l Symp. on VLSI Tech., Systems and Applic., Taiwan, 127-130, (1995).

Zhao, X., et al., "Nanocrystalline Si: a material constructed by Si quantum dots", 1st Int. Conf. on Low Dimensional Structures and Devices, Singapore, 467-471, (1995).


Primary Examiner: Trinh; Michael
Attorney, Agent or Firm: Schwegman, Lundberg Woessner & Kluth P.A.
10 Claims, 5 Drawing Figures

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