United States Patent 6,025,261

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United States Patent	6,025,261
Farrar, et. al.	Feb. 15, 2000

Method for making high-Q inductive elements

Abstract

A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.

Inventors:	Farrar; Paul A. (So. Burlington, VT); *Forbes*; Leonard (Corvallis, OR).
Assignee:	*Micron* Technology, Inc. (Boise, ID).
Appl. No.:	69,346
Filed:	Apr. 29, 1998

Intl. Cl. :	H01L 27/764
Current U.S. Cl.:	438/619; 257/522; 257/758; 438/622; 438/624
Field of Search:	438/411, 619, 622, 624; 257/522, 758

References Cited | [Referenced By]

U.S. Patent Documents

3,932,226	Jan., 1976	Klatskin et al.	204/16
4,670,297	Jun., 1987	Lee et al.	427/91
4,857,481	Aug., 1989	Tam et al.	437/182
5,158,986	Oct., 1992	Cha et al.	521/82
5,268,315	Dec., 1993	Prasad et al.	437/31
5,308,440	May, 1994	Chino et al.	156/664
5,334,356	Aug., 1994	Baldwin et al.	422/133
5,539,227	Jul., 1996	Nakano	257/276
5,593,921	May, 1995	Chen et al.	438/622
5,705,425	Apr., 1996	Miura et al.	438/619
5,798,544	Aug., 1998	Ohya et al.	257/296
5,930,596	Sept., 1996	Klose et al.	438/622
5,930,668	Dec., 1994	Gardner	438/624

Other References

Abidi, "Large Self-Suspended Inductors on Silicon and Their Use in 2-mu m CMOS RF Amplifier", IEEE Electron Device Letters, vol. 17, No. 9, 246-48, (1993).

Burghartz, et al., "Integrated RF and Microwave Components in BiCMOS Technology", IEEE Trans. Electron Devices, vol. 43, No. 9, 1559-70, (1996).

Burghartz, et al., "Multi-level Spiral Inductors Using VLSI Interconnect Technology", IEEE Electron Device Letters, vol. 17, No. 9, 428-30, (1996).

Jin et al., "Porous Xerogel Films as Ultra-low Permitivity Dielectrics for AILS Interconnect Applications", Advanced Metallization and Inerconnect Systems for ULSI Applications, Boston, Ma, (Oct. 1996).

Meyer, et al., "Si IC-Compatible Inductors and LC Passive Filters", IEEE Journal of Solid State Circuits, vol. 25, No. 4, 1028-31, (1990).

Miller, et al., "Low Dielectric Constant Polymides and Polymide Nanofoams", Seventh Meeting of the DuPont Symposium on Polymides in Microelectronics, (Sep. 1996).

Ting, "Low K Material/Process Development", Multilevel Interconnection State-of-the-Art Seminar, Santa Clara, Ca, (Jun. 21, 1996).

Primary Examiner: Bowers; Charles
Assistant Examiner: Blum; David S
Attorney, Agent or Firm: Schwegman, Lundberg Woessner & Kluth, P.A.
42 Claims, 8 Drawing Figures


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