[Help]Full Text[Boolean Search][Advanced][Number Search][Order Copy][PTDLs]

[Previous Patent] [Next Patent] [Back to List]
(2 of 21)


United States Patent 6,025,261
Farrar, et. al. Feb. 15, 2000

Method for making high-Q inductive elements

Abstract

A first insulator is formed on a base layer. A first conductor is formed on the first insulator. The first conductor is patterned. A second insulator is formed over the first insulator. A via hole is formed in the second insulator and is electrically coupled to the first conductor through the via hole. A second conductor is formed on the second insulator, and is electrically coupled to the first conductor by the via hole. The second conductor is patterned. A cavity is formed under the second conductor, and in the first and second insulators.


Inventors: Farrar; Paul A. (So. Burlington, VT); Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 69,346
Filed: Apr. 29, 1998
Intl. Cl. : H01L 27/764
Current U.S. Cl.: 438/619; 257/522; 257/758; 438/622; 438/624
Field of Search: 438/411, 619, 622, 624; 257/522, 758

References Cited | [Referenced By]

U.S. Patent Documents
3,932,226Jan., 1976Klatskin et al. 204/16
4,670,297Jun., 1987Lee et al. 427/91
4,857,481Aug., 1989Tam et al. 437/182
5,158,986Oct., 1992Cha et al. 521/82
5,268,315Dec., 1993Prasad et al. 437/31
5,308,440May, 1994Chino et al. 156/664
5,334,356Aug., 1994Baldwin et al. 422/133
5,539,227Jul., 1996Nakano 257/276
5,593,921May, 1995Chen et al. 438/622
5,705,425Apr., 1996Miura et al. 438/619
5,798,544Aug., 1998Ohya et al. 257/296
5,930,596Sept., 1996Klose et al. 438/622
5,930,668Dec., 1994Gardner 438/624

Other References

Abidi, "Large Self-Suspended Inductors on Silicon and Their Use in 2-mu m CMOS RF Amplifier", IEEE Electron Device Letters, vol. 17, No. 9, 246-48, (1993).

Burghartz, et al., "Integrated RF and Microwave Components in BiCMOS Technology", IEEE Trans. Electron Devices, vol. 43, No. 9, 1559-70, (1996).

Burghartz, et al., "Multi-level Spiral Inductors Using VLSI Interconnect Technology", IEEE Electron Device Letters, vol. 17, No. 9, 428-30, (1996).

Jin et al., "Porous Xerogel Films as Ultra-low Permitivity Dielectrics for AILS Interconnect Applications", Advanced Metallization and Inerconnect Systems for ULSI Applications, Boston, Ma, (Oct. 1996).

Meyer, et al., "Si IC-Compatible Inductors and LC Passive Filters", IEEE Journal of Solid State Circuits, vol. 25, No. 4, 1028-31, (1990).

Miller, et al., "Low Dielectric Constant Polymides and Polymide Nanofoams", Seventh Meeting of the DuPont Symposium on Polymides in Microelectronics, (Sep. 1996).

Ting, "Low K Material/Process Development", Multilevel Interconnection State-of-the-Art Seminar, Santa Clara, Ca, (Jun. 21, 1996).


Primary Examiner: Bowers; Charles
Assistant Examiner: Blum; David S
Attorney, Agent or Firm: Schwegman, Lundberg Woessner & Kluth, P.A.
42 Claims, 8 Drawing Figures

[Previous Patent] [Next Patent] [Back to List]
(2 of 21)