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United States Patent 6,025,627
Forbes, et. al. Feb. 15, 2000

Alternate method and structure for improved floating gate tunneling devices

Abstract

A method and structure for textured surfaces in non volatile floating gate tunneling oxide (FLOTOX) devices, e.g. FLOTOX transistors, are provided. The present invention capitalizes on using "self-structured masks" and a controlled etch to form nanometer scale microtip arrays to form the textured surfaces. The present invention further employs atomic layer epitaxy (ALE) to create a very conformal tunnel oxide layer which complements the nanometer scale microtip arrays. The resulting structure provides a higher tunneling current than currently exists in FLOTOX technology. The improved tunneling currents at low voltages can make these FLOTOX devices suitable for replacing DRAMS.


Inventors: Forbes; Leonard (Corvallis, OR); Geusic; Joseph E. (Berkeley Heights, NJ).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 87,473
Filed: May 29, 1998
Intl. Cl. : H01L 29/788
Current U.S. Cl.: 257/321; 257/316; 257/319
Field of Search: 257/316, 319, 321; 365/185.2

References Cited | [Referenced By]

U.S. Patent Documents
4,757,360Jul., 1988Faraone et al. 257/317
4,947,221Aug., 1990Stewart et al. 257/316
5,429,966Jul., 1995Wu et al. 438/594

Other References

Fong, Y., et al., "Oxides Grown on Textured Single-Crystal Silicon--Dependence on Process and Application in EEPROMs", IEEE Transactions on Electron Devices, 37, 583-590, (Mar. 1990).

Gasser, W., et al., "Quasi-monolayer Deposition of Silicon Dioxide", This Solid Films (250), pp. 213-218, (1994).

Guesic, J., et al., "Structured Silicon Surfaces and Tunnel Oxides for Flash Memory Devices", Micron Disclosure, (Sep. 25, 1997).

Hao, M.Y., et al., "Electrical Characteristics of Oxynitrides Grown on Textured Single-Crystal Silicon", Appl. Phys. Lett., 60, 445-447 (Jan. 1992).

Klaus, et al., "Atomic Layer Controlled Growth of SiO2 Films Using Binary Reaction Sequence Chemistry", Applied Physics Let. 70 (9), 1092-94, ) Mar. 3, 1997.

Ott, A.W., et al., "Al303 Thin Film Growth on Si (100) Using Binary Reaction Sequence Chemistry", Thin Solid Films, vol. 292, 135-44, (1997).

Suntola, T., "Atomic Layer Epitaxy", Handbook of Crystal Growth 3, Thin Films of Epitaxy , Part B: Growth Mechanics and Dynamics, Elsevier, Amsterdam, 601-63, (1994).

Wang, P.W., et al., "Excellent Emission Characteristic of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices", Japanese Journal of Applied Physics, 35, 3369-3373, (Jun. 1996).


Primary Examiner: Saadat; Mahshid
Assistant Examiner: Eckery, II; George C.
Attorney, Agent or Firm: Lundberg; Schwegman Woessner & Kluth P.A.
23 Claims, 9 Drawing Figures

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