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Abstract

A method and structure for textured surfaces in non volatile floating gate tunneling oxide (FLOTOX) devices, e.g. FLOTOX transistors, are provided. The present invention capitalizes on using "self-structured masks" and a controlled etch to form nanometer scale microtip arrays to form the textured surfaces. The present invention further employs atomic layer epitaxy (ALE) to create a very conformal tunnel oxide layer which complements the nanometer scale microtip arrays. The resulting structure provides a higher tunneling current than currently exists in FLOTOX technology. The improved tunneling currents at low voltages can make these FLOTOX devices suitable for replacing DRAMS.

Other References

Fong, Y., et al., "Oxides Grown on Textured Single-Crystal Silicon--Dependence on Process and Application in EEPROMs", IEEE Transactions on Electron Devices, 37, 583-590, (Mar. 1990).

Gasser, W., et al., "Quasi-monolayer Deposition of Silicon Dioxide", This Solid Films (250), pp. 213-218, (1994).

Guesic, J., et al., "Structured Silicon Surfaces and Tunnel Oxides for Flash Memory Devices", Micron Disclosure, (Sep. 25, 1997).

Hao, M.Y., et al., "Electrical Characteristics of Oxynitrides Grown on Textured Single-Crystal Silicon", Appl. Phys. Lett., 60, 445-447 (Jan. 1992).

Klaus, et al., "Atomic Layer Controlled Growth of SiO2 Films Using Binary Reaction Sequence Chemistry", Applied Physics Let. 70 (9), 1092-94, ) Mar. 3, 1997.

Ott, A.W., et al., "Al303 Thin Film Growth on Si (100) Using Binary Reaction Sequence Chemistry", Thin Solid Films, vol. 292, 135-44, (1997).

Suntola, T., "Atomic Layer Epitaxy", Handbook of Crystal Growth 3, Thin Films of Epitaxy , Part B: Growth Mechanics and Dynamics, Elsevier, Amsterdam, 601-63, (1994).

Wang, P.W., et al., "Excellent Emission Characteristic of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices", Japanese Journal of Applied Physics, 35, 3369-3373, (Jun. 1996).

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