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United States Patent 6,043,527
Forbes Mar. 28, 2000

Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device

Abstract

A memory device is described which has an n-channel field effect transistor coupled between a memory cell and a data communication line. An NPN bipolar junction transistor is also coupled between the memory cell and the data communication line in parallel to the n-channel access transistor. A base connection of the NPN bipolar junction transistor is described as coupled to a body of the n-channel access transistor. During operation the n-channel field effect transistor is used for writing data to a memory cell, while the NPN bipolar junction transistor is used for read operations in conjunction with a current sense amplifier circuit. The access transistors are described as fabricated as a single vertical pillar.


Inventors: Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 60,048
Filed: Apr. 14, 1998
Intl. Cl. : H01L 27/108, H01L 29/16, H01L 29/94, H01L 31/119
Current U.S. Cl.: 257/296; 257/300; 257/302; 365/149; 365/177; 365/225.6
Field of Search: 257/296, 298, 300, 302, 273, 277, 370, 378; 365/149, 177, 174, 225.6

References Cited | [Referenced By]

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5,102,817Apr., 1992Chatterjee et al. 437/47
5,110,752May, 1992Lu 437/47
5,156,987Oct., 1992Sandhu et al. 437/40
5,177,028Jan., 1993Manning 437/41
5,177,576Jan., 1993Kimura et al. 257/71
5,202,278Apr., 1993Mathews et al. 437/47
5,208,657May, 1993Chatterjee et al. 257/302
5,216,266Jun., 1993Ozaki 257/302
5,223,081Jun., 1993Doan 156/628
5,266,514Nov., 1993Tuan et al. 437/52
5,316,962May, 1994Matsuo et al. 437/52
5,320,880Jun., 1994Sandhu et al. 427/578
5,327,380Jul., 1994Kersh, III et al. 365/195
5,329,481Jul., 1994Seevinck et al. 365/177
5,341,331Aug., 1994Jeon 365/189.01
5,376,575Dec., 1994Kim et al. 437/52
5,391,911Feb., 1995Beyer et al. 257/522
5,392,245Feb., 1995Manning 365/200
5,393,704Feb., 1995Huang et al. 437/203
5,396,093Mar., 1995Lu 257/306
5,410,169Apr., 1995Yamamoto et al. 257/301
5,414,287May, 1995Hong 257/316
5,422,499Jun., 1995Manning 257/67
5,427,972Jun., 1995Shimizu et al. 437/52
5,432,739Jul., 1995Pein 365/185
5,438,009Aug., 1995Yang et al. 437/52
5,440,158Aug., 1995Sung-Mu 257/314
5,445,986Aug., 1995Hirota 437/60
5,460,316Oct., 1995Hefele 228/39
5,460,988Oct., 1995Hong 437/43
5,466,625Nov., 1995Hsieh et al. 437/52
5,483,094Jan., 1996Sharma et al. 257/316
5,483,487Jan., 1996Sung-Mu 365/185.33
5,492,853Feb., 1996Jeng et al. 437/60
5,495,441Feb., 1996Hong 365/185.01
5,497,017Mar., 1996Gonzales 257/306
5,504,357Apr., 1996Kim et al. 257/306
5,508,219Apr., 1996Bronner et al. 437/52
5,508,542Apr., 1996Geiss et al. 257/301
5,519,236May, 1996Ozaki 257/302
5,528,062Jun., 1996Hsieh et al. 257/298
5,563,083Oct., 1996Pein 437/43
5,574,299Nov., 1996Kim 257/296
5,593,912Jan., 1997Rajeevakumar 437/52
5,616,934Apr., 1997Dennison et al. 257/67
5,640,342Jun., 1997Gonzalez 365/156
5,644,540Jul., 1997Manning 365/200
5,646,900Jul., 1997Tsukude et al. 365/205
5,691,230Nov., 1997Forbes 437/62
5,705,415Jan., 1998Orlowski et al. 437/43
5,834,814Nov., 1998Ito 257/378
5,907,170May, 1999Forbes et al. 257/296

Foreign Patent Documents
363066963AMar., 1988JP 257/305
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Primary Examiner: Chaudhuri; Olik
Assistant Examiner: Cao; Phat X.
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner & Kluth, P.A.
19 Claims, 5 Drawing Figures

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