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|United States Patent||6,049,106|
|Forbes||Apr. 11, 2000|
A vertical thin film transistor formed in a single grain of polysilicon having few or no grain boundaries for use in memory, logic and display applications. The transistor is formed from a thin film of polysilicon having large columnar grains, in which source and drain regions have been formed. The large grain size and columnar grain orientation of the thin film are provided by recrystallizing a thin amorphous silicon film, or by specialized deposition of the thin film. Use of a thin film permits the transistor to be formed on an insulating substrate such as glass, quartz, or inexpensive silicon rather than a semiconductor chip, thereby significantly decreasing device cost.
|Inventors:||Forbes; Leonard (Corvallis, OR).|
|Assignee:||Micron Technology, Inc. (Boise, ID).|
|Filed:||Jan. 14, 1999|
|Intl. Cl. :||H01L 29/72|
|Current U.S. Cl.:||257/329; 257/49; 257/51; 257/64; 257/67|
|Field of Search:||257/329, 49, 51, 64, 67|
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|5,792,700||Aug., 1998||Turner et al.||257/329|
|5,847,406||Dec., 1998||Dennison et al.||257/329|
|5,872,374||Feb., 1999||Tang et al.||257/329|
G.K. Giust et al., "Laser Recrystallization of Polycrystalline Silicon in Recessed Structures", Journal of Electronic Materials, vol. 26, No. 8, 1997, pp. L13-L16.
Do-Hyun Choi et al., "Electrical Properties of Ultralarge Grain Polycrystalline Silicon Film Produced by Excimer-Laser Recrystallization Method", Jpn. J. Appl. Phys. vol. 34 (1995) pp. 459-463.
E. Srinivasan et al., "Large Crystallite Polysilicon Deposited Using Pulsed-Gas PECVD at Temperatures Less than 250 deg. C", Mat. Res. Soc. Symp.. Proc. vol. 452, 1997, Materials Research Society, pp. 989-994.
Eun Gu Lee et al., A Study of the Morphology and Microstructure of LPCVD Polysilicon, Journal of Materials Science 28 (1993) pp. 6279-6284.
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