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United States Patent 6,075,272
Forbes, et. al. Jun. 13, 2000

Structure for gated lateral bipolar transistors

Abstract

An improved structure and method for gated lateral bipolar transistors is provided. The present invention capitalizes on opposing sidewall structures and adjacent conductive sidewall members to conserve available surface space on the semiconductor chips. The conserved surface space allows a higher density of structures per chip. The conductive sidewall members couple to the gate of the gated lateral bipolar transistor and, additionally, to a retrograded, more highly doped bottom layer. The improved structure provides for both metal-oxide semiconductor (MOS) type conduction and bipolar junction transistor (BJT) type conduction beneath the gate of the gated lateral bipolar transistor.


Inventors: Forbes; Leonard (Corvallis, OR); Noble; Wendell P. (Milton, VT).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 50,266
Filed: Mar. 30, 1998
Intl. Cl. : H01L 29/76, H01L 27/082
Current U.S. Cl.: 257/378; 257/162; 257/273; 257/557; 257/575
Field of Search: 257/134, 141, 153, 162, 256, 262, 273, 343, 370, 378, 557, 575

References Cited | [Referenced By]

U.S. Patent Documents
4,450,048May, 1984Gaulier 204/15
4,673,962Jun., 1987Chatterjee et al. 357/23.6
4,922,315May, 1990Vu 357/35
4,987,089Jan., 1991Roberts 437/34
4,996,574Feb., 1991Shirasaki 357/23.7
5,006,909Apr., 1991Kosa 357/23.6
5,023,688Jun., 1991Ando et al. 357/42
5,097,381Mar., 1992Vo et al. 361/313
5,122,848Jun., 1992Lee et al. 357/23.6
5,250,450Oct., 1993Lee et al. 437/40
5,315,143May, 1994Tsuji 257/351
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5,491,356Feb., 1996Dennison et al. 257/306
5,508,544Apr., 1996Shah 257/316
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5,691,230Nov., 1997Forbes 437/62
5,796,143Aug., 1998Fulford, Jr. et al. 257/330
5,796,166Aug., 1998Agnello et al. 257/751
5,892,260Apr., 1999Okumura et al. 257/347

Foreign Patent Documents
431855 B1Nov., 1990EP
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Primary Examiner: Tran; Minh Loan
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner & Kluth, P.A.
16 Claims, 14 Drawing Figures

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