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United States Patent 6,104,066
Noble, et. al. Aug. 15, 2000

Circuit and method for low voltage, voltage sense amplifier

Abstract

An improved circuit and method for gate-body transistors is provided. The improved circuit and method can accord a faster switching speed and low power consumption. The present invention capitalizes on opposing sidewalls and adjacent conductive sidewall members to conserve available surface space on the semiconductor chips. The gate and body of the transistors are biased to modify the threshold voltage of the transistor (V(t)). Additionally, the conductive sidewall members and a gate are biased from a single source. The structure offers performance advantages from both metal-oxide semiconductor (MOS) and bipolar junction transistor (BJT) designs. The device can be used in a variety of applications, digital and analog, wherever a more compact structure with low power consumption and fast response time is needed.


Inventors: Noble; Wendell P. (Milton, VT); Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 50,615
Filed: Mar. 30, 1998
Intl. Cl. : H01L 27/12, H01L 27/11
Current U.S. Cl.: 257/350; 257/369; 257/370; 257/903
Field of Search: 257/350-351, 369-370, 377-378, 401, 903; 327/51, 57

References Cited | [Referenced By]

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4,996,574Feb., 1991Shirasaki 357/23.7
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5,796,143Aug., 1998Fulford, Jr. et al. 257/330
5,796,166Aug., 1998Agnello et al. 257/751
5,892,260Apr., 1999Okumura et al. 257/347

Foreign Patent Documents
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Other References

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Primary Examiner: Guay; John
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner & Kluth, P.A.
11 Claims, 14 Drawing Figures

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