
![[Help]](/include/help.gif)

![[Boolean Search]](/include/boolean.gif)
![[Advanced]](/include/advanced.gif)
![[Number Search]](/include/number.gif)
![[Order Copy]](/include/copy.gif)
| United States Patent | 6,141,248 |
| Forbes, et. al. | Oct. 31, 2000 |
DRAM and SRAM memory cells with repressed memory
Abstract
The transfer device of a typical DRAM cell is replaced with a transistor having an additional gate. The unique cell can be accessed as a typical DRAM cell by reading from or writing to a storage capacitor or as a nonvolatile memory by storing charges on the additional gate. Thus, a DRAM cell having a nonvolatile memory component within its cell is formed in a simple and cost effective manner. Transistors in a typical SRAM cell are also replaced by the transistors with the additional gate to form a SRAM cell having a nonvolatile component built within its cell.
| Inventors: | Forbes; Leonard
(Corvallis, OR);
Reinberg; Alan R.
(Westport, CT).
|
| Assignee: | Micron Technology, Inc.
(Boise, ID).
|
| Appl. No.: | 362,909 |
| Filed: | Jul. 29, 1999 |
| Intl. Cl. : | G11C 14/00 |
| Current U.S. Cl.: | 365/185.08; 365/149; 365/154 |
| Field of Search: | 365/185.08, 149, 154 |
References Cited | [Referenced By]
U.S. Patent Documents
| 4,271,487 | Jun., 1981 | Craycraft et al. | 365/185.08 |
| 4,333,166 | Jun., 1982 | Edwards | 365/185.08 |
| 4,760,556 | Jul., 1988 | Deguchi et al. | 365/149 |
| 5,042,011 | Aug., 1991 | Casper et al. | |
| 5,111,427 | May, 1992 | Kobayashi et al. | 365/154 |
| 5,153,853 | Oct., 1992 | Eby et al. | |
| 5,280,205 | Jan., 1994 | Green et al. | |
| 5,399,516 | Mar., 1995 | Bergendahl et al. | |
| 5,418,739 | May, 1995 | Takasugi | |
| 5,424,569 | Jun., 1995 | Prall | |
| 5,488,587 | Jan., 1996 | Fukumoto | |
| 5,497,494 | Mar., 1996 | Combs et al. | |
| 5,619,642 | Apr., 1997 | Nielson et al. | |
| 5,627,785 | May, 1997 | Gilliam et al. | |
| 5,796,670 | Aug., 1998 | Liu | |
| 5,801,401 | Sept., 1998 | Forbes | |
| 5,852,306 | Dec., 1998 | Forbes | |
| 5,870,327 | Feb., 1999 | Gitlin et al. | |
| 5,880,991 | Mar., 1999 | Hsu et al. | |
| 5,986,932 | Nov., 1999 | Ratnakumar et al. | 365/185.08 X |
| 6,009,011 | Dec., 1999 | Yamauchi | 365/185.08 X |
-
Other References
-
Dipert et al., "Flash Memory Goes Mainstream," IEEE SPECTRUM, Oct. 1993/vol. 30/Nov. 10, pp. 48-52.
Primary Examiner: Hoang; Huan
Attorney, Agent or Firm: Dickstein, Shapiro, Morin & Oshinsky LLP
83 Claims, 14 Drawing Figures