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United States Patent 6,141,248
Forbes, et. al. Oct. 31, 2000

DRAM and SRAM memory cells with repressed memory

Abstract

The transfer device of a typical DRAM cell is replaced with a transistor having an additional gate. The unique cell can be accessed as a typical DRAM cell by reading from or writing to a storage capacitor or as a nonvolatile memory by storing charges on the additional gate. Thus, a DRAM cell having a nonvolatile memory component within its cell is formed in a simple and cost effective manner. Transistors in a typical SRAM cell are also replaced by the transistors with the additional gate to form a SRAM cell having a nonvolatile component built within its cell.


Inventors: Forbes; Leonard (Corvallis, OR); Reinberg; Alan R. (Westport, CT).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 362,909
Filed: Jul. 29, 1999
Intl. Cl. : G11C 14/00
Current U.S. Cl.: 365/185.08; 365/149; 365/154
Field of Search: 365/185.08, 149, 154

References Cited | [Referenced By]

U.S. Patent Documents
4,271,487Jun., 1981Craycraft et al. 365/185.08
4,333,166Jun., 1982Edwards 365/185.08
4,760,556Jul., 1988Deguchi et al. 365/149
5,042,011Aug., 1991Casper et al.
5,111,427May, 1992Kobayashi et al. 365/154
5,153,853Oct., 1992Eby et al.
5,280,205Jan., 1994Green et al.
5,399,516Mar., 1995Bergendahl et al.
5,418,739May, 1995Takasugi
5,424,569Jun., 1995Prall
5,488,587Jan., 1996Fukumoto
5,497,494Mar., 1996Combs et al.
5,619,642Apr., 1997Nielson et al.
5,627,785May, 1997Gilliam et al.
5,796,670Aug., 1998Liu
5,801,401Sept., 1998Forbes
5,852,306Dec., 1998Forbes
5,870,327Feb., 1999Gitlin et al.
5,880,991Mar., 1999Hsu et al.
5,986,932Nov., 1999Ratnakumar et al. 365/185.08 X
6,009,011Dec., 1999Yamauchi 365/185.08 X

Other References

Dipert et al., "Flash Memory Goes Mainstream," IEEE SPECTRUM, Oct. 1993/vol. 30/Nov. 10, pp. 48-52.


Primary Examiner: Hoang; Huan
Attorney, Agent or Firm: Dickstein, Shapiro, Morin & Oshinsky LLP
83 Claims, 14 Drawing Figures

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