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United States Patent 6,141,260
Ahn, et. al. Oct. 31, 2000

Single electron resistor memory device and method for use thereof

Abstract

A method of operating a memory cell formed from semiconductor material by storing data represented by one or more electrons in islands of conductive material that are situated in anodically-defined pores formed in the semiconductor material. The islands are insulated from the semiconductor material by dielectric material. The memory cell storing the data is accessed, and an electrical parameter that is manifested in response to a stimulus is sampled. Based on the sample of the electrical parameter, it is determined whether one or more electrons are stored by the memory cell.


Inventors: Ahn; Kie Y. (Chappapua, NY); Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 141,767
Filed: Aug. 27, 1998
Intl. Cl. : G11C 16/04
Current U.S. Cl.: 365/189.07; 865/185.22
Field of Search: 365/189.07, 185.22, 185.28, 185.18, 185.01

References Cited | [Referenced By]

U.S. Patent Documents
5,485,595Jan., 1996Assar et al. 395/430
5,621,687Apr., 1997Doller 365/185.29
5,708,605Jan., 1998Sato 365/185.29
5,731,598Mar., 1998Kado et al. 257/30
5,740,104Apr., 1998Forbes 365/185.03
5,754,477May, 1998Forbes 365/185.33

Other References

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Primary Examiner: Nelms; David
Assistant Examiner: Ho; Hoai V.
Attorney, Agent or Firm: Dorsey & Whitney LLP
16 Claims, 19 Drawing Figures

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