[Help]Full Text[Boolean Search][Advanced][Number Search][Order Copy][PTDLs]

[Previous Patent] [Next Patent] [Back to List]
(3 of 57)


United States Patent 6,143,616
Geusic, et. al. Nov. 7, 2000

Methods of forming coaxial integrated circuitry interconnect lines

Abstract

Methods of forming integrated circuitry lines such as coaxial integrated circuitry interconnect lines, and related integrated circuitry are described. An inner conductive coaxial line component is formed which extends through a substrate. An outer conductive coaxial line component and coaxial dielectric material are formed, with the coaxial dielectric material being formed operably proximate and between the inner and outer conductive coaxial line components. In a preferred implementation, the substrate includes front and back surfaces, and a hole is formed which extends through the substrate and between the front and back surfaces. In one implementation, the outer conductive coaxial line component constitutes doped semiconductive material. In another implementation, such constitutes a layer of metal-comprising material. A layer of dielectric material is formed over and radially inwardly of the outer line component. Conductive material is then formed over and radially inwardly of the dielectric material layer. The latter conductive material constitutes an inner conductive coaxial line component. In a preferred implementation, the inner conductive coaxial line component is formed by forming a first material within the hole. A second conductive material is formed over the first material. Subsequently, the substrate is exposed to conditions which are effective to cause the second material to replace the first material.


Inventors: Geusic; Joseph E. (Berkeley Heights, NJ); Ahn; Kie Y. (Chappaqua, NY); Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 917,449
Filed: Aug. 22, 1997
Intl. Cl. : H01L 21/20
Current U.S. Cl.: 438/389; 438/542; 438/667; 438/668
Field of Search: 438/611, 675, 108, 667, 514, 524, 389, 542, 668

References Cited | [Referenced By]

U.S. Patent Documents
3,982,268Sept., 1976Anthony et al. 357/55
4,394,712Jul., 1983Anthony 361/411
4,419,150Dec., 1983Soclof 148/187
4,440,973Apr., 1984Hawkins 174/107
4,595,428Jun., 1986Anthony et al. 148/187
4,610,077Sept., 1986Minahan et al. 29/572
4,776,087Oct., 1988Cronin et al. 29/828
4,870,470Sept., 1989Bass, Jr. et al. 357/23.5
4,933,743Jun., 1990Thomas et al. 357/71
4,939,568Jul., 1990Kato et al. 357/75
4,977,439Dec., 1990Esquivel et al. 357/49
5,148,260Sept., 1992Inoue et al. 357/67
5,166,097Nov., 1992Tanielian 438/667
5,312,765May, 1994Kanber 437/22
5,317,197May, 1994Roberts 257/401
5,424,245Jun., 1995Gurtler et al. 437/183
5,426,072Jun., 1995Finnila 437/208
5,482,873Jan., 1996Yang 438/365
5,539,256Jul., 1996Mikagi 257/763
5,587,119Dec., 1996White 264/104
5,596,230Jan., 1997Hong 257/758
5,599,744Feb., 1997Koh et al. 438/660
5,608,237Mar., 1997Aizawa et al. 257/132
5,614,743Mar., 1997Mochizuki 257/276
5,618,752Apr., 1997Gaul 438/626
5,640,049Jun., 1997Rostoker et al. 257/758
5,646,067Jul., 1997Gaul 437/180
5,661,344Aug., 1997Havemann et al. 257/758
5,682,062Oct., 1997Gaul 257/686
5,698,867Dec., 1997Bauer et al. 257/138
5,699,291Dec., 1997Tsunemine 365/149
5,717,247Feb., 1998Koh et al. 257/686
5,750,436May, 1998Yamaga et al. 438/558
5,753,529May, 1998Chang et al. 437/67
5,767,001Jun., 1998Bertagnolli et al. 438/455
5,807,783Aug., 1998Gaul et al. 438/406
5,811,868Sept., 1998Bertin et al. 257/516
5,817,572Oct., 1998Chiang et al. 438/624
5,827,775Oct., 1998Miles et al. 438/622
5,841,197Nov., 1998Adamic, Jr. 257/777
5,852,320Dec., 1998Ichihashi 257/419
5,858,877Jan., 1999Dennison et al. 438/700
5,869,893Feb., 1999Koseki et al. 257/723
5,930,625Jul., 1999Lin et al. 438/253
5,990,562Nov., 1999Vallett 257/754
6,001,538Dec., 1999Chen et al. 430/316

Foreign Patent Documents
4-133472May, 1992JP 257/621
Other References

V. Lehmann, "The Physics of Macropore Formation in Low Doped N-Type Silicon", J. Electrochem. Soc., vol. 140, No. 10, pp. 2836-2843, Oct. 1993.

H. Horie et al., "Novel High Aspect Ratio Plug for Logic/DRAM LSIs Using Polysilicon-Aluminum Substitute (PAS)", Technical Digest of International Electron Devices Meeting, pp. 946-948, Dec. 1996.

V. Lehmann, "The Physics of Macropore Formation in Low Doped N-Type Silicon," J. Electrochem. Soc., vol. 140, No. 10, Oct. 1993, pp. 2836-2843.

K.P. Muller et al., "Trench Storage Node Technology for Gigabit DRAM Generation," Technical Digest of International Electron Devices Meeting, Dec. 8-11, 1996, pp. 507-510.

H. Horie et al., "Novel High Aspect Ratio Plug for Logic/DRAM LSIs Using Polysilicon-Aluminum Substitute (PAS)," Technical Digest of International Electron Devices Meeting, Dec. 8-11, 1996, pp. 946-948.

U.S. application No. 08/917,443, Ahn, filed Aug. 22, 1997.

Sekine, M., et al., "A New High-Density Plasma Etching System Using a Dipole-Ring Magnet", Jpn. J. Phys., Nov. 1995, Pt. I, No. 11, pp. 6274-6278.

VLSI Multilevel Micro-Coaxial Interconnects for High Speed Devices, M.E. Thomas, I.A. Saadat & S. Sekigahama, IEEE 1990, pp. 90-55--90-58.

Selective Chemical Vapor Deposition of Tungsten Using Silane and Polysilane Reductions, T. Ohba, T. Suzuki, T. Hara, Y. Furumura, & K. Wada, 1989 Materials Research Society, 9 pgs.

High Rate Low-Temperature Selective Tungsten, R.F. Foster, S. Tseng, L. Lane & K.Y. Ahn, 1988 Materials Research Society, 4 pgs.

Evaluation on Selective Deposition of CVD W Films by Measurement of Surface Temperature, T. Ohba, Y. Ohayama, S. Inoue, & M. Maeda, 1987 Materials Research Society, 8 pgs.

U.S. application No. 08/917,003, Ahn, filed Aug. 27, 1997.

U.S. application No. 09/095,774, Ahn, filed Jun. 10, 1998.

U.S. application No. 09/118,346, Geusic et al., filed Jul. 17, 1998.

Low and High Dielectric Constant Thin Films for Integrated Circuit Applications, R.J. Gutmann, et al., 10/3-5/96, 6 pgs.


Primary Examiner: Chaudhuri; Olik
Assistant Examiner: Eaton; Kurt
Attorney, Agent or Firm: Wells, St. John, Roberts, Gregory & Matkin, P.S.
4 Claims, 13 Drawing Figures

[Previous Patent] [Next Patent] [Back to List]
(3 of 57)