[Help]Full Text[Boolean Search][Advanced][Number Search][Order Copy][PTDLs]

  [Next Patent] [Back to List]
(1 of 64)

United States Patent 6,163,066
Forbes, et. al. Dec. 19, 2000

Porous silicon dioxide insulator


A porous silicon dioxide insulator having a low relative dielectric constant of about 2.0 or less is formed from a silicon carbide base layer. Initially, at least one layer of silicon carbide is deposited on a semiconductor substrate. The silicon carbide layer is then etched to form a porous silicon carbide layer, which is oxidized to produce the final porous silicon dioxide layer.

Inventors: Forbes; Leonard (Corvallis, OR); Ahn; Kie Y. (Chappaqua, NY).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 139,151
Filed: Aug. 24, 1998

Related U.S. Application Data
Division of Ser No. 796,289, Feb. 7, 1997.
Intl. Cl. : H01L 27/108
Current U.S. Cl.: 257/632; 257/296; 438/960
Field of Search: 257/632, 629, 296, 639; 438/960

References Cited | [Referenced By]

U.S. Patent Documents
5,165,283Nov., 1992Kurtz et al.
5,286,565Feb., 1994Holzl et al.
5,298,767Mar., 1994Shor et al.
5,454,915Oct., 1995Shor et al.
5,472,913Dec., 1995Havemann et al. 437/195
5,548,159Aug., 1996Jeng 257/634
5,569,932Oct., 1996Shor et al.
5,597,738Jan., 1997Kurtz et al.
5,885,871Mar., 1999Chan et al. 438/265

Other References

J.M. Agullo et al., "Graduated Si(x) C(1).multidot.X Ceramic Thin Films Deposited By Thermal Decomposition of Hydrocarbons and Tetraethylsilane", Advances in Inorganic Films and Coatings, 199-205 (1995).

M.B. Anand et al., "NURA: A feasible, Gas-Dielectric Interconnect Process", 1996 Symposium on VSLI Technology Digest of Technical Pacers, 82-83 (1996).

P. Friedrichs et al., "Interface properties of metal-oxide-semiconductor structures on n-type 6H and 4H-SiC", J. Appl. Phys., 79(10), 7814-7819 (1996).

E.M. Goldstein, "Methods for improving the oxidation resistance of graphite", Carbon, 6(2), 223 (1968).

R. Maury et al., "Chemical vapor co-deposition of C and SiC at moderate temperature for the synthesis of compositionally modulated Si(x) C(1-x) ceramic layers", Surface and Coatings Technology, 76(1-3), 119-125 (1995).

C.S. Patuwathavithane et al., "Oxidation Studies for 6H-SiC", Prox. 4(^th) Int. Conf. Amorphous and Crystalline Silicon Carbide163-169 (1992).

Powell et al., "Growth and Characterization of Cubic SiC single-Crystal Films on Si", Journal of the Electrochemical Society, 134(6), 1555-1565 (1987).

J.M. Powers et al., "The surface oxidation of alpha-silicon carbide by O(2) from 300 to 1373 K", Surface Science, 244(1-2), 39-50 (1991).

Mimura et al., "Light Emitting Devices Using Porous Silicon and Porous Silicon Carbide", Solid-State Electronics, 40, 501-504 (1996).

C.E. Ramberg et al., "Oxidation Behavior of CVD and Single Crystal SiC at 1100 deg. C", J. Electrochem. Soc., 142(11), L214-L216 (1995).

J.E. Song et al., "Thermal Oxidation of 6H-Silicon Carbide", Korean Phys. Soc. Ungyong Mulli, 8(4), 346-350 (1995).

J. Togo et al., "A Gate-side Air-gap Structure (GAS) to Reduce the Par(--) Capacitance in MOSFETs", 1996 Symposium on VLSI Technology Digest of Technical Papers, 38-39 (1996).

Danishevskii et al., "Intense photoluminescence of porous layers of SiC films grown on silicon substrates", Semiconductors, 31:354-358 (1997).

Gherasim-Vrsinceanu et al., "On Porosity and Pore Size Distribution of Macroporous Silicon Layers by Scanning Electron Microscopy Investigation", IEEE, 181-182, 184 (1997).

K. Jayaraj et al., "Low dielectric constant microcellular foams," 7(^th) Dupont Symp. on Polyimids in Microelectronics,p. 29 (1996).

Jessensky et al., "Microstructure and photoluinescence of electronchemically etched porous SiC", Thin Solid Films, 297:224-228 (1997).

Jung et al., "Developments in Luminescent Porous Si", J. Electrochem. Soc., 140:3046-3064 (1993).

van de Lagemaat et al., "Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching", Appl. Phys. Lett.69:2246-2248 (1998).

R. D. Miller et al., Low dielectric constant polyimides and polyimides and polyimide nanofams, 7(^th) DuPont Symp. On Polyimides in Microelectronics, pp. 26-27 (1996).

Mimura et al., "Blue electroluminescence from porous silicon carbide", Appl. Phys. Lett.,65:3350-3352 (1994).

Shor et al., "Direct observation of porous SiC formed by anodization in HF", Appl. Phys. Lett., 62-:2836-2838 (1993).

Smith et al., "Porous Silicon formation mechanism", J. Appl. Phys., 71:R1-R22 (1992).

Primary Examiner: Hardy; David
Attorney, Agent or Firm: Mueting, Raasch & Gebhardt, P.A.
26 Claims, 11 Drawing Figures

  [Next Patent] [Back to List]
(1 of 64)