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United States Patent 6,163,066
Forbes, et. al. Dec. 19, 2000

Porous silicon dioxide insulator

Abstract

A porous silicon dioxide insulator having a low relative dielectric constant of about 2.0 or less is formed from a silicon carbide base layer. Initially, at least one layer of silicon carbide is deposited on a semiconductor substrate. The silicon carbide layer is then etched to form a porous silicon carbide layer, which is oxidized to produce the final porous silicon dioxide layer.


Inventors: Forbes; Leonard (Corvallis, OR); Ahn; Kie Y. (Chappaqua, NY).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 139,151
Filed: Aug. 24, 1998

Related U.S. Application Data
Division of Ser No. 796,289, Feb. 7, 1997.
Intl. Cl. : H01L 27/108
Current U.S. Cl.: 257/632; 257/296; 438/960
Field of Search: 257/632, 629, 296, 639; 438/960

References Cited | [Referenced By]

U.S. Patent Documents
5,165,283Nov., 1992Kurtz et al.
5,286,565Feb., 1994Holzl et al.
5,298,767Mar., 1994Shor et al.
5,454,915Oct., 1995Shor et al.
5,472,913Dec., 1995Havemann et al. 437/195
5,548,159Aug., 1996Jeng 257/634
5,569,932Oct., 1996Shor et al.
5,597,738Jan., 1997Kurtz et al.
5,885,871Mar., 1999Chan et al. 438/265

Other References

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Danishevskii et al., "Intense photoluminescence of porous layers of SiC films grown on silicon substrates", Semiconductors, 31:354-358 (1997).

Gherasim-Vrsinceanu et al., "On Porosity and Pore Size Distribution of Macroporous Silicon Layers by Scanning Electron Microscopy Investigation", IEEE, 181-182, 184 (1997).

K. Jayaraj et al., "Low dielectric constant microcellular foams," 7(^th) Dupont Symp. on Polyimids in Microelectronics,p. 29 (1996).

Jessensky et al., "Microstructure and photoluinescence of electronchemically etched porous SiC", Thin Solid Films, 297:224-228 (1997).

Jung et al., "Developments in Luminescent Porous Si", J. Electrochem. Soc., 140:3046-3064 (1993).

van de Lagemaat et al., "Enhancement of the light-to-current conversion efficiency in an n-SiC/solution diode by porous etching", Appl. Phys. Lett.69:2246-2248 (1998).

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Smith et al., "Porous Silicon formation mechanism", J. Appl. Phys., 71:R1-R22 (1992).


Primary Examiner: Hardy; David
Attorney, Agent or Firm: Mueting, Raasch & Gebhardt, P.A.
26 Claims, 11 Drawing Figures

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