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United States Patent 6,166,401
Forbes Dec. 26, 2000

Flash memory with microcrystalline silicon carbide film floating gate


A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of microcrystalline silicon carbide particles. The microcrystalline silicon carbide particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.

Inventors: Forbes; Leonard (Corvallis, OR).
Assignee: Micron Technology, Inc. (Boise, ID).
Appl. No.: 137,006
Filed: Aug. 20, 1998

Related U.S. Application Data
Continuation of (including streamline cont.) Ser. No. 790,603, Jan. 29, 1997, Pat. No. 5,801,401.
Intl. Cl. : H01L 29/72
Current U.S. Cl.: 257/77; 257/314; 257/321; 257/407; 257/412; 257/741
Field of Search: 257/77, 314, 321, 407, 412, 741

References Cited | [Referenced By]

U.S. Patent Documents
4,507,673Mar., 1985Aoyama et al. 357/23.R
5,021,999Jun., 1991Kohda et al. 365/168
5,027,171Jun., 1991Reedy et al. 357/23.5
5,111,430May, 1992Morie 365/185
5,253,196Oct., 1993Shimabukuro 365/45
5,260,593Nov., 1993Lee 257/316
5,293,560Mar., 1994Harari 365/185
5,317,535May, 1994Talreja et al. 365/185
5,357,134Oct., 1994Shimoji 257/325
5,388,069Feb., 1995Kokubo 365/185
5,418,743May, 1995Tomioka et al. 365/189.01
5,424,993Jun., 1995Lee et al. 365/218
5,430,670Jul., 1995Rosenthal 365/45
5,434,815Jul., 1995Smarandoiu et al. 365/189.01
5,438,544Aug., 1995Makino 365/185
5,449,941Sept., 1995Yamazaki et al. 257/411
5,465,249Nov., 1995Cooper et al. 365/149
5,467,306Nov., 1995Kaya et al. 365/185.2
5,477,485Dec., 1995Bergemont et al. 365/185.24
5,485,422Jan., 1996Bauer et al. 365/168
5,493,140Feb., 1996Iguchi 257/316
5,508,543Apr., 1996Hartstein et al. 257/314
5,580,380Dec., 1996Liu et al. 117/86
5,627,781May, 1997Hayashi et al. 365/185.2
5,670,790Sept., 1997Katoh et al. 257/14
5,801,401Sept., 1998Forbes 257/77

Foreign Patent Documents
0139185May, 1985EP
0448118Sept., 1991EP
0750353Dec., 1996EP
3-222367Oct., 1991JP
6-224431Aug., 1994JP
6-302828Oct., 1994JP
8-255878Oct., 1996JP
Other References

Akasaki, I., et al., "Effects of AlN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Ga(1-x)Al(x)N [0< x (< or =) 0.4] Films Grown on Sapphire Substrate by MOVPE", J. Crystal Growth, 98, 209-219, (1989) Jan.

Alok, D., et al., "Electrical Properties of Thermal Oxide Grown on N-type 6H-Silicon Carbide", Applied Physcis Letters, 64, 2845-2846, (May 23, 1994).

Andrieux, M., et al., "Interface and Adhesion of PACVD SiC Based Films on Metals", Supp. Le Vide: science, technique et applications, 279, 212-214, (1996) Jan.

Bachmann, P., et al., "Influence on Surface Modifications on the Electronic Properties of CVD Diamond Films", Diamond and Related Materials, 5, 1378-1383, (1996) Jan.

Baglee, D., "Characteristics & Reliability of 100 Angstrom Oxides", IEEE 22nd Annual Proc.: Reliability Physics, Las Vegas, 152-155, (Apr. 3-5, 1984).

Baldwin, G.L., et al., "The Electronic Conduction Mechanism of Hydrogenated Nanocrystalline Silicon Films", Proc. 4th Int. Conf. on Solid-State and Int. Circuit Tech, Beijing, 66-68, (1995) Jan.

Bauer, M., et al., "A Multilevel-Cell 32 Mb Flash Memory", Digest IEEE, Solid-State Circuits Conf.,, 440, (1995) Jan.

Beheim, G., et al., "Magnetron Plasma Etching of SiC for Microstructures", Proc: SPIE--Integrated Optics and Microstructures III, San Jose, CA, 82-86, (Jan. 29, 1996).

Bengtsson, S., et al., "Applications of Aluminum Nitride Films Deposited by Reactive Sputtering to Silicon-On-Insulator Materials", Japanese J. Applied Physics, 35, 4175-4181, (1996) Jan.

Benjamin, M., et al., "UV Photoemission Study of Heteroepitaxial AlGaN Films Grown on 6H-Sic", Applied Surface Science, 104/105, 455-460, (1996) Jan.

Bermudez, V., et al., "The Growth and Properties of Al and AlN Films on GaN(0001)-(1*1)", J. Applied Physics, 79, 110-119, (Jan. 1996).

Boeringer, D.W., et al., "Avalanche amplification of multiple resonant tunneling through parallel silicon microcrystallites", Physical Rev. B, 51, 13337-13343, (1995) Jan.

Casey, H., et al., "Low Interface Trap Density for Remote Plasma Deposited SiO2 on n-type GaN", Applied Phys. Lett., 68, 1850-1852, (Mar. 1996).

Choi, J., et al., "Effect of Deposition Conditions and Pretreatments on the Microstructure of MPECVD Diamond Thin Films", Materials Chemistry and Physics, 45, 176-179, (1996) Jan.

Clarke, G., et al., "The Infrared Properties of Magnetron-Sputtered Diamond-Like Thin Films", Thin Solid Films, 280, 130-135, (1996) Jan.

Compagnini, G., et al., "Spectroscopic Characterization of Annealed Si(1-x)C(x) Films", J. Materials Res., 11, 2269-2273, (Sep. 1996).

Dartnell, N., et al., "Reactive Ion Etching of Silicon Carbide (Si(x)C(1-x))", Vacuum, 46, 349-355, (1995) Jan.

Demichelis, F., et al., "Influence of Doping on the Structural and Optoelectronic Properties of Amorphous and Microcrystalline Silicon Carbide", Journal of Applied Physics, 72, 1327-1333, (Aug. 15, 1992).

Demichelis, F., et al., "Physical Properties of Undoped and Doped Microcrystalline SiC:H Deposited By PECVD", Materials Research Society Symposium Proceedings, 219, Anaheim, CA, 413-418, (Apr. 30-May 3, 1991).

Dipert, B., et al., "Flash Memory Goes Mainstream", IEEE Spectrum, 30, 48-52, (1993) Jan.

Edelberg, E., et al., "Visible Luminescence from Nanocrystallie silicon films produced by plasma enhanced chemical vapor deposition", Appl. Phys. Lett., 68, 1415-1417, (1996) Jan.

Fissel, A., et al., "Epitaxial Growth of SiC Thin Films on Si-stabilized alph-SiC (0001) at Low Temperatures by Solid-source Molecular Beam Epitaxy", Journal of Crystal Growth, 154, 72-80, (1995) Jan.

Friedrichs, P., et al., "Interface Properties of Metal-Oxide-Semiconductor Structures on N-Type 6H and 4H-SiC", J. Applied Physics, 79, 7814-7819, (May 15, 1996).

Fujii, T., et al., "Bonding Structures in Highly Photoconductive a-SiC:H Films Deposited by Hybrid-Plasma Chemical Vapor Deposition", Journal of Non-Crystalline Solids, 198-200, 577-581, (1996) Jan.

Goetzberger, A., et al., Applied Solid State Science: Advances in Materials and Device Research, R. Wolfe, ed., Academic Press, New York, Including p. 233, (1969) Jan.

Graul, J., et al., "Growth Mechanism of Polycrystalline beta-SiC Layers on Silicon Substrate", Applied Phys. Lett., 21, 67-69, (Jul. 1972).

Hamakawa, Y., et al., "Optoelectronics and Photovoltaic Applications of Microcrystalline SiC", Materials Research Society Symposium Proceedings, 164, Boston, MA, 291-301, (Nov. 29-Dec. 1, 1989).

He, Z., et al., "Ion-beam-assisted Deposition of Si-carbide Films", Thin Solid Films, 260, 32-37, (1995) Jan.

Hu, G., "Will Flash Memory Replace Hard Disk Drive?", IEEE Electron Devices Meeting , Session 24, (Dec. 13, 1994).

Hwang, J., et al., "High Mobility beta-SiC Epilayer Prepared by Low-pressure Rapid Thermal Chemical Vapor Deposition on a (100) Silicon Substrate", Thin Solid Films, 272, 4-6, (1996) Jan.

Hybertsen, M.S., "Absorption and Emission of Light in Nanoscale Silicon Structures", Phys. Rev. Lett., 72, 1514-1517, (1994) Jan.

Jou, S., et al., "Electron Emission Characterization of Diamond Thin Films Grown from a Solid Carbon Source", Thin Solid Films, 280, 256-261, (1996) Jan.

Jung, T.S., et al., "A 3.3V, 128Mb Multi-Level NAND Flash Memory for Mass Storage Applications", 1996 IEEE Solid-State Circuits Conf., Digest of Technical Papers, 512, (1996) Jan.

Kamata, T., et al., "Substrate Current Due to Impact Ionization in MOS-FET", Japan. J. Appl. Phys., 15, 1127-1134, (Jun. 1976).

Kato, M., et al., "Read-Disturb Degradation Mechanism due to Electron Trapping in the Tunnel Oxide for Low-voltage Flash Memories", IEEE Electron Device Meeting, 45-48, (1994) Jan.

Kothandaraman, M., et al., "Reactive Ion Etching of Trenches in 6H-SiC", J. Electronic Materials, 25, 875-878, (1996) Jan.

Kumbhar, A., et al., "Growth of Clean Amorphous Silicon-Carbon Alloy Films by Hot-Filament Assisted Chemical Vapor Deposition Technique", Applied Phys. Lett, 66, 1741-1743, (Apr. 1995).

Lakshmi, E., et al., "Interface-State Characteristics of GaN/GaAs MIS Capacitors", Solid-State Electronics, 25, 811-815, (1982) Jan.

Lanois, F., et al., "Angle Etch Control of Silicon Carbide Power Devices", Applied Phys. Lett., 69, 236-238, (Jul. 1996).

Lau, S., et al., "Optoelectronic Properties of Highly Conductive Microcrystalline SiC Produced by Laser Crystallization of Amorphous SiC", J. of Non-Crystalline Solids, 198-200, 907-910, (1996) Jan.

Leggieri, G., et al., "Laser Ablation Deposition of Silicon Carbide Films", Applied Surface Science, 96-98, 866-869, (1996) Jan.

Lei, T., et al., "Epitaxial Growth and Characterization of Zinc-Blende Gallium Nitride on (001) Silicon", J. Appl. Phys., 71, 4933-4943, (May 1992).

Liu, J., et al., "Formation of SiC Films on Silicon Field Emitters", Materials Res. Soc. Symp. Proc., 311, San Francisco, CA, (Apr. 13-15, 1993).

Liu, J., et al., "Modification of Si Field Emitter Surfaces by Chemical Conversion to SiC", J. Vac. Sci. Technology, B 12, 717-721, (1994).

Luo, J., et al., "Localized Epitaxial Growth of Hexagonal and Cubic SiC Films on Si by Vacuum Annealing", Applied Phys. Lett., 69, 916-918, (Aug. 1996).

Maury, F., et al., "Chemical Vapor Co-Deposition of C and SiC at Moderate Temperature for the Synthesis of Compositionally Modulated Si(x)C(1-x) Ceramic Layers", Surface and Coatings Technology, 76-77, 119-125, (1995) Jan.

McLane, G., et al., "High Etch Rates of SiC in Magnetron Enhanced SF(6) Plasmas", Applied Phys. Lett., 68, 3755-3757, (Jun. 1996).

Mogab, C., et al., "Conversion of Si to Epitaxial SiC by Reaction with C(2)H(2)", J. Applied Physics, 45, 1075-1084, (Mar. 1974).

Molnar, R., et al., "Growth of Gallium Nitride by Electron-Cyclotron Resonance Plasma-Assisted Molecular-Beam Epitaxy: The Role of Charged Species", J. Appl. Phys., 76, 4587-4595, (1994) Jan.

Muller, K., et al., "Trench Storage Node Technology for Gigabit DRAM Generations", Digest IEEE Int. Electron Devices Meeting, San Francisco, CA, 594-597, (Dec. 1996).

Nemanich, R., et al., "Negative Electron Affinity Surfaces of Aluminum Nitride and Diamond", Diamond and Related Materials, 5, 790-796, (1996) Jan.

Ohkawa, M., et al., "A 98 mm 3.3V 64Mb Flash Memory with FN-NOR type 4-Level Cell", IEEE International Solid-State Circuits Conference, 36-37, (1996) Jan.

Ouyang, M., et al., "Deposition of Diamond-Like Carbon Films via Excimer Laser Ablation of Polybutadiene", Materials Science and Engineering, B39, 228-231, (1996) Jan.

Pankove, J., et al., "Photoemission from GaN", Applied Phys. Lett., 25, 53-55, (1974) Jan.

Papadas, C., et al., "Modeling of the Intrinsic Retention Characteristics of FLOTOX EEPROM Cells Under Elevated Temperature Conditions", IEEE Transaction on Electron Devices, 42, 678-682, (Apr. 1995).

Patuwathavithane, C., et al., "Oxidation Studies for 6H-SiC", Proc: 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide IV, Santa Clara, CA, 163-169, (Oct. 9-11, 1991).

Pereyra, I., et al., "Wide Gap a-Si(1-x)C(x): H Thin Films Obtained Under Starving Plasma Deposition Conditions", J. Non-Crystalline Solids, 201, 110-118, (1996) Jan.

Pollack, S., "Electron Transport Through Insulating Thin Films", Appl. Solid-State Science, 1, 345-355, (1969) Jan.

Prendergast, J., "FLASH or DRAM: Memory Choice for the Future", IEEE Electron Device Meeting, Session 25, Phoenix, AZ, (1995) Jan.

Rahman, M., et al., "Preparation and Electrical Properties of An Amorphous SiC/ Crystalline Si p(+)n Heterostructure", Japanese J. Applied Physics, 23, 515-524, (May 1984).

Schmidt, I., et al., "Low Temperature Diamond Growth Using Fluorinated Hydrocarbons", Diamond and Related Materials, 5, 1318-1322, (1996) Jan.

Schoenfeld, O., et al., "Formation of Si Quantum dots in Nanocrystalline silicon", Proc. 7th Int. Conf. on Modulated Semiconductor Structures, Madrid, 605-608, (1995) Jan.

Serre, C., et al., "Ion-Beam Synthesis of Amorphous SiC Films: Structural Analysis and Recrystallization", J. Appl. Phys., 79, 6907-6913, (May 1996).

Shimabukuro, R.L., et al., "Circuitry for Artificial Neural Networks with Non-volatile Analog Memories", IEEE Int'l Symp. on Circuits and Systems, 2, 1217-1220, (1989) Jan.

Shimabukuro, R.L., et al., "Dual-Polarity Nonvolatile MOS Analogue Memory (MAM) Cell for Neural-Type Circuitry", Electronics Lett., 24, 1231-1232, (Sep. 15, 1988).

Sim, S., et al., "A New Planar Stacked Technology (PST) for Scaled and Embedded DRAMs", Digest IEEE Int. Electron Devices Meeting, San Francisco, CA, 504-507, (Dec. 1996).

Suh, K.D., et al., "A 3.3 V 32 Mb NAND Flash Memory with Incremental Step Pulse Programming Scheme", IEEE J. Solid-State Circuits, 30, 1149-1156, (Nov. 1995).

Suzaki, Y., et al., "Quantum Size Effects of a-Si(:H)/a-SiC(:H) Multilayer Films Prepared by rf Sputtering", Abstracts of Papers Published in the Int. J. Japenese Soc. for Precision Engineering, 28, Abstract of Paper in vol. 60, 182, (Jun. 1994).

Svirkova, N., et al., "Deposition Conditions and Density-of-States Spectrum of a-Si(1-x)C(x) :H Films Obtained by Sputtering", Semiconductors, 28, 1164-1169, (Dec. 1994).

Sze, S.M., "Physics of Semiconductor Devices", Wiley-Interscience 2d Ed., New York, 482, (1981) Jan.

Takeuchi, K., et al., "A Double-Level-V Select Gate Array Architecture for Multilevel NANAD Flash Memories", IEEE Journal of Solid-State Circuits, 31, 602-609, (Apr. 1996).

Tarui, Y., "Flash Memory Features Simple Structure, Superior Integration", JEE, 30, 84-87, (Sep. 1993).

Tenhover, M., et al., "DC-Magnetron Sputtered Silicon Carbide", Materials Res. Soc. Symp. Proc., 356, Boston, MA, 227-232, (Nov. 28-Dec. 2, 1994).

Thomas, J., et al., "Plasma Etching and Surface Analysis of a-SiC :H Films Deposited by Low Temperature Plasma Enhanced Chemical Vapor Deposition", Materials Res. Soc. Symp. Proc., 334, Boston, MA, 445-450, (Nov. 29-Dec. 2, 1993).

Tiwari, S., et al., "A silicon nanocrystal based memory", Appl. Physics Lett., 68, 1377-1379, (1996) Jan.

Tiwari, S., et al., "Volatile and Non-Volatile Memories in Silicon with Nano-Crystal Storage", Int'l Electron Devices Meeting: Technical Digest, Washington, DC, 521-524, (Dec. 1995).

Tsu, R., et al., "Slow Conductance oscillations in nanoscale silicon clusters of quantum dots", Appl. Phys. Lett., 65, 842-844, (1994) Jan.

Tsu, R., et al., "Tunneling in Nanoscale Silicon Particles Embedded in an SiO/sub/2 Matrix", Abstract, IEEE Device Research Conference, 178-179, (1996) Jan.

Tucker, C., et al., "Ion-beam-assisted Deposition of Nonhydrogenated a-Si:C Films", Can. J. Physics, 74, 97-101, (1996) Jan.

Vodakov, Y., et al., "Diffusion and Solubility of Impurities in Silicon Carbide", In: Silicon Carbide, R.C. Marshall, et al., eds., Univ. of South Carolina Press, 508-519, (1973) Jan.

Wahab, Q., et al., "3C-SiC / Si / 3C-SiC Epitaxial Trilayer Films Deposited on Si (111) Substrates by Reactive Magnetron Sputtering", J. Materials Res., 10, 1349-1351, (Jun. 1995).

Watanabe, A., et al., "SiC Thin Film Preparation by ArF Excimer Laser Chemical Vapor Deposition. Part 1: Rate of Photolysis of Alkylsilanes by ArF Excimer Laser and their Decomposition Products", Thin Solid Films, 274, 70-75, (1996) Jan.

Wolter, S., et al., "Textured Growth of Diamond on Silicon via in situ Carburization and Bias-Enhanced Nucleation", Appl. Phys. Lett., 62, 1215-1217, (Mar. 1993).

Wu, K., et al., "The Growth and Characterization of Silicon/Silicon Carbide Heteroepitaxial Films on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition", Japanese J. Appl. Phys., 35, 3836-3840, (1996) Jan.

Yamaguchi, Y., et al., "Properties of Heteroepitaxial 3C-SiC Films Grown by LPCVD", Digest of Tech. Papers: 8th Int. Conf. on Solid-State Sensors and Actuators and Eurosensors IX, vol. 2, Stockholm, Sweden, 190-193, (Jun. 1995).

Yamanashi, H., et al., "Deposition of Silicon Compound Thin Films in DC Discharge Plasma Using Hydrogen-Hexamethyldisilane Gas Mixture", Proc.: Int. Symp. on Surfaces and Thin Films of Electronic Materials. Bull. of the Res. Institute of Electronics, Shizuoka University, 30, 95-98, (1995) Jan.

Ye, Q., et al., "Resonant Tunneling via Microcrystalline-silicon quantum confinement", Physical Rev. B, 44, 1806-1811, (1991).

Yee, A., et al., "The Effect of Nitrogen on Pulsed Laser Deposition of Amorphous Silicon Carbide Films: Properties and Structure", J. Materials Research, 11, 1979-1986, (1996).

Yih, C.M., et al., "A Consistent Gate and Substrate Current Model for Sub-Micron MOSFET'S by Considering Energy Transport", Int'l Symp. on VLSI Tech., Systems and Applic., Taiwan, 127-130, (1995).

Zhao, X., et al., "Nanocrystalline Si: a material constructed by Si quantum dots", 1st Int. Conf. on Low Dimensional Structures and Devices, Singapore, 467-471, (1995).

Primary Examiner: Wojciechowicz; Edward
Attorney, Agent or Firm: Schwegman, Lundberg, Woessner & Kluth, P.A.
27 Claims, 5 Drawing Figures

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