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|United States Patent||6,653,196|
|Ahn ,   et al.||November 25, 2003|
The invention includes a stacked open pattern inductor fabricated above a semiconductor substrate. The stacked open pattern inductor includes a plurality of parallel open conducting patterns embedded in a magnetic oxide or in an insulator and a magnetic material. Embedding the stacked open pattern inductor in a magnetic oxide or in an insulator and a magnetic material increases the inductance of the inductor and allows the magnetic flux to be confined to the area of the inductor. A layer of magnetic material may be located above the inductor and below the inductor to confine electronic noise generated in the stacked open pattern inductor to the area occupied by the inductor. The stacked open pattern inductor may be fabricated using conventional integrated circuit manufacturing processes, and the inductor may be used in connection with computer systems.
|Inventors:||Ahn; Kie Y. (Chappaqua, NY); Forbes; Leonard (Corvallis, OR)|
|Assignee:||Micron Technology, Inc. (Boise, ID)|
|Filed:||October 25, 2002|
|Current U.S. Class:||438/788; 438/792|
|Intern'l Class:||H01L 021/20|
|Field of Search:||438/3,104,171,190,210,238,329,381,536,609,635,788,789,790,792,793,794|
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|4689594||Aug., 1987||Kawabata et al.||336/200.|
|5032815||Jul., 1991||Kobayashi et al.||336/83.|
|5302932||Apr., 1994||Person et al.||336/200.|
|5349743||Sep., 1994||Grader et al.||29/602.|
|5643804||Jul., 1997||Arai et al.||437/21.|
|5656101||Aug., 1997||Hayakawa et al.||148/306.|
|5801521||Sep., 1998||Mizoguchi et al.||323/282.|
|6429632||Aug., 2002||Forbes et al.||323/282.|
|6566731||May., 2003||Ahn et al.||257/531.|
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