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United States Patent | 6,696,330 |
Forbes ,   et al. | February 24, 2004 |
Many integrated circuits, particularly digital memories, include millions of field-effect transistors which operate simultaneously and thus consume considerable power. One way to reduce power consumption is to lower transistor threshold, or turn-on, voltage, and then use lower-voltage power supplies. Although conventional techniques of lowering threshold voltage have enabled use of 2-volt power supplies, even lower voltages are needed. Several proposals involving a dynamic threshold concept have been promising, but have failed, primarily because of circuit-space considerations, to yield practical devices. Accordingly, the present invention provides a space-saving structure for a field-effect transistor having a dynamic threshold voltage. One embodiment includes a vertical gate-to-body coupling capacitor that reduces the surface area required to realize the dynamic threshold concept. Other embodiments include an inverter, voltage sense amplifier, and a memory. Ultimately, the invention facilitates use of half-volt (or lower) power supplies.
Inventors: | Forbes; Leonard (Corvallis, OR); Noble; Wendell P. (Milton, VT) |
Assignee: | Micron Technology, Inc. (Boise, ID) |
Appl. No.: | 228732 |
Filed: | August 27, 2002 |
Current U.S. Class: | 438/210; 438/239; 438/304 |
Intern'l Class: | H01L 021/823.8 |
Field of Search: | 438/200,210,230,238,239,304 |
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