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|United States Patent||7,084,429|
|Forbes||August 1, 2006|
One aspect of the present invention relates to a method for forming a strained semiconductor structure. In various embodiments, at least two strong bonding regions are defined for a desired bond between a crystalline semiconductor membrane and a crystalline semiconductor substrate. The two strong bonding regions are separated by a weak bonding region. The membrane is bonded to the substrate at a predetermined misorientation. The membrane is pinned to the substrate in the strong bonding regions. The predetermined misorientation provides the membrane in the weak bonding region with a desired strain. In various embodiments, the membrane is bonded to the substrate at a predetermined twist angle to biaxially strain the membrane in the weak bonding region. In various embodiments, the membrane is bonded to the substrate at a predetermined tilt angle to uniaxially strain the membrane in the weak bonding region. Other aspects are provided herein.
|Inventors:||Forbes; Leonard (Corvallis, OR)|
Micron, Technology, Inc.
|Filed:||August 31, 2004|
|Current U.S. Class:||257/66 ; 257/213; 257/590|
|Current International Class:||H01L 29/76 (20060101)|
|Field of Search:||257/66,213,590|
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