ABSTRACTS -

1. 1970 C.T. Sah, L. Forbes and W.W. Chan, "A NEW MODEL OF NEGATIVE PHOTOCURRENT," Bulletin of the American Physical Soc., Series II, Vol. 15, No. 12, pp. 1590-1591, (Dec. 1970).

2. 1971 L. Forbes, W.W. Chan and C.T. Sah, "NEW MODEL OF HIGH GAIN INTRINSIC PHOTOCONDUCTORS," Bulletin of the American Physical Soc., Series II, Vol. 16, No. 3, pp. 329, (March 1971).

3. 1971 C.T. Sah, L.L. Rosier and L. Forbes, "PHONON ASSISTED PHOTOIONIZATION AT THE SINGLY IONIZED SULFUR DONOR CENTER IN Si," Bulletin of the American Physical Soc., Series II, Vol. 16, No. 3, pp. 437, (March 1971).

4. 1974 L. Forbes, "NONRADIATIVE RECOMBINATION CENTERS IN GaAsP RED LED'S," IEEE Trans. on Electron Devices, Vol. ED-21, pp. 745-746, (1974).

5. 1974 W.C. Parker, L.L. Wittmer, J.R. Yeargan and L. Forbes, "EXPERIMENTAL CHARACTERIZATION OF THE INFRARED RESPONSE OF GOLD-DOPED SILICON MOSFET's (IRFET's)," Late News Supplement of the Proc. of the 1974 Int'l. Electron Device Mtng., Paper No. 4.8, (Dec. 1974).

6. 1976 L. Forbes, K.W. Loh and L.L. Wittmer, "CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)," Digest of Tech. Papers, The 8th Conf. (1976 Int'l. on Solid-State Devices,) Paper No. B-3-1, pp. 87-88, (See also 29A).

7. 1977 K.W. Current, L.B. Wheaton and L. Forbes, "COST-EFFECTIVE, CUSTOM BIOMEDICAL INTEGRATED ELECTRONICS," Proc. of the Third Biomedical Engr. Symp., Univ. of California at Davis, Sept. 20-21, 1977, pp. 14.

8. 1978 G.F. Anderson, K.W. Current and L. Forbes, "NONUNIFORMLY DOPED JFET'S FOR USE IN GaAs MESFET CIRCUITS: A SIMULATION," 1978 Device Res. Conf. abstract published in IEEE Trans. Elect. Devices, Vol. ED-25, No. 11, pp. 1340-1341, (Nov. 1978). (See also 35A).

9. 1979 E. Sun, B. Alders and L. Forbes, "ELECTRON TRAPPING AND SHORT CHANNEL EFFECT IN MOS/BULK AND MOS/SOS TRANSISTORS," 1979 Device Res. Conf. abstract, IEEE Trans. Electron Devices, Vol. ED-26, No. 11, pp. 1849, (Nov. 1979).

10. 1979 J.W. Chen, R.J. Ko, D.W. Brezinski, L. Forbes and C. Dell'Oca, "BULK TRAPS IN SILICON-ON-SAPPHIRE BY CONDUCTANCE DLTS," Proc. 1979 IEEE Workshop on SOS Devices. (See also 2C).

ABSTRACTS - (cont'd)

11. 1979 L. Forbes and C.D. Chang, "CONDUCTANCE TRANSIENTS ON GaAs MESFET's," Proc. 1979 GaAs Int'l. Circuits Symp., Oct. 26-27, 1979, Lake Tahoe, NV, pp. 16.

12. 1979 L. Forbes and C.D. Chang, "DARK CAPACITANCE, PHOTOCAPACITANCE, DARK CONDUCTANCE, AND PHOTOCONDUCTANCE TRANSIENTS ON GaAs MESFET's," Handbook of Abstracts, Semi-Insulating III-V Materials Conf., Univ. of Nottingham, April 1980, pp. D.4. (See also 1B).

13. 1982 C.Y. Kung, L. Forbes and J.D. Peng, "THE EFFECT OF CARBON IN FORMATION OF OXYGEN PRECIPITATION IN CZ SILICON CRYSTALS," Abstracts of the Materials Res. Soc. Annual Mtng., Boston 1982, pp. 80-81.

14. 1982 L. Forbes, C.Y. Kung and J.D. Peng, "INFRARED ABSORPTION OF OXYGEN PRECIPITATES IN SILICON," Abstracts of the Materials Res. Soc. Annual Mtng., Boston, 1982, pp. 86.

15. 1983 C.Y. Kung, L. Forbes and J.D. Peng, "THREE-STEP-ANNEALS AND OXYGEN PRECIPITATION IN HIGH CARBON CZ SILICON," Extend Abstracts of Electrochem. Soc. Mtng., San Francisco, May 1983, pp. 419-425.

16. 1983 L. Forbes, C.Y. Kung and J.D. Peng, "OXYGEN PRECIPITATION DENUDED ZONES, INTRINSIC GETTERING AND GENERATION LIFETIMES ON (100) CZ SILICON," Extend Abstracts of Electrochem. Soc. Mtng., San Francisco, May 1983, pp. 427-428.

17. 1984 L. Forbes, P. Canfield, R. Gleason and A. McCamant, "LOW FREQUENCY NOISE IN GaAs FET's AND HEMT's," Abstracts of Semi-Insulating III-V Materials Conf., Kah-Nee-Ta, OR, Apr. 24-26, 1984. Also presented as late news paper by McCamant at the Workshop of Compound Semiconductor Materials for Microwave Applications and Devices

18. 1984 L. Forbes, P. Canfield, R. Gleason and A. McCamant, "SEPARATION OF GENERATION-RECOMBINATION AND 1/f NOISE COMPONENTS ON GaAs FET's," Abstracts of the 1984 Device Res. Conf., IEEE Trans. on Elect. Devices, Vol. ED-31, No. 11.

19. 1984 J.D. Peng and L. Forbes, "AMBIENT EFFECTS ON OXYGEN PRECIPITATION IN SILICON," Recent News Abstracts 697, Electrochemical Soc. Mtng., New Orleans, LA, Oct. 7-12, 1984.

20. 1984 L. Forbes, F.D. Whitwer and J.D. Peng, "OXYGEN PRECIPITATION IN CMOS WAFERS," Abstract C5.7 Mat'l. Res. Soc. Annual Mtng., Boston, MA, Nov. 26-30, 1984.

ABSTRACTS - (cont'd)

21. 1985 M. Aminzadeh and L. Forbes, ""FAZT" - FAST ZERBST-LIKE ANALYSIS OF THE TRANSIENT RESPONSE OF MOS CAPACITORS," Portland Int'l. Conf. on Silicon Materials and Technology, 27-28 June 1985, pp. 26.

22. 1985 F.D. Whitwer, L. Forbes and H. Haddad, "DLTS EVALUATION OF THE ELECTRICAL CHARACTERISTICS OF PRECIPITATION INDUCED MICRODEFECTS IN CZ SILICON," Portland Int'l. Conf. on Silicon Materials and Technology, 27-28 June 1985, pp. 25.

23. 1985 W. Wijaranakula, P. Burke and L. Forbes, "EFFECT OF HEAT TREATMENT AMBIENTS ON GROWTH KINETICS OF BULK DEFECTS IN EPITAXIAL SILICON MATERIALS," Portland Int'l. Conf. on Silicon Materials and Technology, 27-28 June 1985, pp. 42.

24. 1985 W.I. Sze, Yvonne (C-C) Lee and L. Forbes, "IMPROVEMENT OF SILICON DIOXIDE DIELECTRIC STRENGTH BY INTRINSIC GETTERING BY BULK STACKING FAULTS," Portland Int'l. Conf. on Silicon Materials and Technology, 27-28 June 1985, pp. 43.

25. 1986 M. Aminzadeh and L. Forbes, "FAST ZERBST TRANSIENT ANALYSIS AND APPLICATION TO INTRINSICALLY GETTERED P-TYPE EPITAXIAL WAFERS," Abstracts of the Materials Res. Soc. Spring Mtng., San Francisco, 1986, pp. 191-192, also Proc. Portland Int'l. Conf. on Silicon and Technology, 1-2 July 1986, pp. 33.

26. 1986 W. Wijaranakula, P. Burke and L. Forbes; and J. Matlock, "EFFECT OF PREANNEAL HEAT TREATMENT ON OXYGEN PRECIPITATION IN EPITAXIAL SILICON," Abstracts of the Materials Res. Soc. Spring Mtng., San Francisco, 1986, pp. 192; also Proc. Portland Int'l. Conf. on Silicon Materials and Technology, 1-2 July 1986, pp. 43.

27. 1986 F.D. Whitwer, H. Haddad and L. Forbes, "DLTS CHARACTERIZATION OF PRECIPITATION INDUCED MICRODEFECTS," Abstracts of the Materials Res. Soc. Spring Mtng., San Francisco, 1986, pp. 188-189; also Proc. Portland Int'l. Conf. on Silicon Materials and Technology, 1-2 July 1986, pp. 35.

28. 1986 W.I. Sze and L. Forbes, "PHYSICAL MODELS OF INTERNAL GETTERING," Proc. Portland Int'l. Conf. on Silicon Materials and Technology, 1-2 July 1986, pp. 32.

29. 1986 L. Forbes and B. Rastegar, "A DESKTOP COMPUTER-BASED CALCULATION OF HIGH FREQUENCY MOS C-V CURVES," Proc. Portland Int'l. Conf. on Silicon Materials and Technology, 1-2 July 1986, pp. 38.

ABSTRACTS - (cont'd)

30. 1986 P. Canfield and L. Forbes, "SUPPRESSION OF DEEP LEVEL TRAPPING RELATED EFFECTS IN GaAs MESFET's USING A BURIED CHANNEL STRUCTURE," Abstracts of the 1986 Device Res. Conf., IEEE Trans. on Electron Devices, Vol. ED-33, No. 11, pp. 1851, (1986).

31. 1986 W. Wijaranakula, P. Burke and L. Forbes; and J.H. Matlock, "IMPACT OF THE EPITAXIAL DEPOSITION PROCESS ON OXYGEN PRECIPITATION IN P+(100) SILICON," Ext. Abs. of the Electro-Chem. Soc. Mtng., San Diego, Vol. 86-2, pp. 828-829, (1986).

32. 1987 P. Canfield, D.J. Allstot, J. Medinger and L. Forbes; A.J. McCamant, W.A. Vetanen, B. Odekirk and E.P. Finchem; K.R. Gleason, "HIGH SPEED QUARTER MICRON BURIED CHANNEL MESFET's WITH IMPROVED OUTPUT CHARACTERISTICS FOR ANALOG APPLICATIONS," Abstracts of the Cornell Conference on Adv. Concepts in High Speed Semiconductor Devices & Circuits, p. 45, (1987).

33. 1987 P. Canfield, D.J. Allstot, J. Medinger and L. Forbes; A.J. McCamant, W.A. Ventanen, B. Odekirk and E.P. Finchem; K.R. Gleason, "BURIED-CHANNEL GaAs MESFET's WITH IMPROVED SMALL SIGNAL CHARACTERISTICS," Abstracts of the 1987 IEEE GaAs Integrated Circuits Symp., pp. 163-166, (1987).

34. 1987 W.T. Anderson, M. Simons, L. Forbes, R.Y Koyama and T.M. Reeder, "TRANSIENT RADIATION UPSET OF GaAs BUFFERED FET LOGIC IC's," Abstracts of the 1987 IEEE GaAs Integrated Circuits Symp., pp. 23-26, (1987).

35. 1988 W.I. Sze, M. Aminzadeh and L. Forbes, "SOME CONSIDERATIONS IN USING THE ZERBST TECHNIQUE FOR LONG LIFETIME SILICON MATERIALS," Proc. Portland Conf. on Silicon Materials & Technology, p. 15, (1988).

36. 1988 M. Aminzadeh and L. Forbes, "RECOMBINATION LIFETIME OF SHORT BASE WIDTH DEVICES USING THE PULSED MOS CAPACITOR TECHNIQUE," Proc. Portland Conf. on Silicon Materials & Technology, p. 14, (1988).

37. 1988 M. Aminzadeh and L. Forbes, "RECOMBINATION LIFETIME OF P/P+ EPITAXIAL SILICON," Ext. Abstracts, ECS Meeting, Chicago, Vol. 88-2, pp. 633-634, (1988).

38. 1991 S.S.B. Or, L. Forbes and H. Haddad, "THERMAL RE-EMISSION OF HOT-ELECTRONS IN NMOS TRANSISTORS," Proc. IEEE Device Research Conf., Boulder, Colorado, paper IVD-5, (1991). Short Abstract also published in IEEE Trans. Electron Devices, Vol. ED-38, pp. 2712-2713, (Dec. 1991).

ABSTRACTS - (cont'd)

39. 1993 E. Cartagena, G. Garcia, G. Imthurn, G. Kelley, H. Walker and L. Forbes, "BONDED ETCHBACK SILICON ON SAPPHIRE BIPOLAR JUNCTION TRANSISTORS," Abstracts of ECS Meeting, Honolulu, Hawaii, pp. 191, (May 1993).

40. 1993 I. Kurachi, N. Hwang and L. Forbes, "LIFETIME PREDICTION MODEL FOR ANALOG DEVICES BASED ON DRAIN CONDUCTANCE DEGRADATION DUE TO HOT CARRIER INJECTION," Int'l. Workshop on VLSI Process & Device Modeling, Nara, Japan, pp. 130-131, (May 1993).

41. 1995 L. Forbes, W.T. Lim and K.T. Yan, "GUARD RING DIODES FOR THE SUPPRESSION OF SUBSTRATE NOISE AND IMPROVED RELIABILITY IN MIXED-MODE CMOS CIRCUITS," Int'l. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore, pp. 145-148 (Nov. 1995).

42. 1995 K.T. Yan and L. Forbes, "DESIGN FOR AND THE CONTROL OF THE CHANNEL AND 1/f NOISE IN GaAs MESFET's," Int'l. Symp. on the Physical and Failure Analysis of Integrated Circuits, Singapore, pp. 164-168 (Nov. 1995).

43. 1995 K.T. Yan and L. Forbes, "1/f BULK PHENOMENA NOISE THEORY FOR GaAs MESFET's," IEEE TENCON on Microelectronics and VLSI, Hong Kong, pp. 111-114 (Nov 1995).

44. 1996 L. Forbes and M.S. Choi, “l/f NOISE DUE TO TEMPERATURE FLUCTUATIONS IN HEAT CONDITION,” Ext. Abst. Device Research Conference, Santa Barbara, pp. 46-47(June 1996).