[Databa[Search[Result[RECORD[News][Exit] [Help] [ Database= Inspec | Search=au=("forbes | Results= 81 records | Records= 41, leonard") or 42, au=("forbes 43, l") 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60 ] --------------------------------------------------------------------------- [Email Records] --------------------------------------------------------------------------- Record: 41 RECORD NO.: 2495254 INSPEC Abstract No: B85045704 AUTHOR: Canfield, P.; Forbes, L. CORP SOURCE: Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA TITLE: Gate-bias-dependent low-frequency oscillations in GaAs MISFETs SOURCE: IEEE Electron Device Letters, vol.EDL-6, no.5, p. 227-8 ISSN: 0741-3106 CODEN: EDLEDZ PLACE OF PUBL: USA LANGUAGE: English YEAR: May 1985 COPYRIGHT NO: 0741-3106/85/0500-0227$01.00 TREATMENT: X Experimental ABSTRACT: Low-frequency oscillations at 4-100 Hz have been observed in GaAs MISFETs. The amplitude and initiation of the oscillations have been found to depend on the gate bias. The frequency of oscillations is also temperature-dependent. When this temperature dependence is plotted on an Arrhenius- type graph, an activation energy of 0.8 eV is obtained with a time constant of about 1 s at room temperature (5 Refs.) DESCRIPTORS: electron device noise; gallium arsenide; III-V semiconductors; insulated gate field effect transistors; random noise IDENTIFIERS: gate bias dependence; noise; 1/f noise; low-frequency oscillations; GaAs MISFETs; temperature dependence; Arrhenius-type graph; activation energy; time constant CLASS CODES: B2560R (Insulated gate field effect transistors) --------------------------------------------------------------------------- Record: 42 RECORD NO.: 2215753 INSPEC Abstract No: A84039515 AUTHOR: Kung, C.Y.; Forbes, L.; Peng, J.D. CORP SOURCE: Silicon Materials Div., Fairchild Camera & Instrument Corp., Healdsburg, CA, USA TITLE: The effect of carbon on oxygen precipitation in high carbon CZ silicon crystals SOURCE: Materials Research Bulletin, vol.18, no.12, p. 1437-41 ISSN: 0025-5408 CODEN: MRBUAC PLACE OF PUBL: USA LANGUAGE: English YEAR: Dec. 1983 COPYRIGHT NO: 0025-5408/83$3.00+.00 TREATMENT: X Experimental ABSTRACT: To clarify the role of carbon impurities in the formation of oxygen precipitates, the behavior of CZ silicon wafers with varying carbon concentrations from 0.2 ppm to 2 ppm were studied under different heat treatment conditions. It is found that the rate of reduction in interstitial oxygen is not a function of carbon concentration as reported previously for both the cases of medium and low temperature annealing. Under medium temperature (1050 degrees C) annealing no carbon reduction was detected, even though the reduction in interstitial oxygen can be very large, while with low temperature (750 degrees C) annealing, oxygen reduction is always associated with the carbon reduction, but is not dependent on carbon concentration alone. A heterogeneous precipitation model is presented to explain the observed phenomena (10 Refs.) DESCRIPTORS: annealing; carbon; elemental semiconductors; interstitials; oxygen; precipitation; silicon IDENTIFIERS: Si:C, O; semiconductor; O precipitation; impurities; heat treatment conditions; interstitial; annealing; reduction; heterogeneous precipitation model CLASS CODES: A6170B (Interstitials and vacancies); A6475 (Solubility, segregation, and mixing) --------------------------------------------------------------------------- Record: 43 RECORD NO.: 1932116 INSPEC Abstract No: B82052480 AUTHOR: Chang, C.D.; Forbes, L.; Zuleeg, R. EDITOR: Sugano, T. CORP SOURCE: Dept. of Electrical & Computer Engng., Univ. of California, Davis, CA, USA TITLE: Long term conductance transients on GaAs JFETs SOURCE: Gallium Arsenide and Related Compunds, 1981. Ninth International Symposium on Gallium Arsenide and Related Compounds, p. xvi+592, 179-83 PLACE OF PUBL: UK ISBN: 0854981543 LANGUAGE: English PUBLISHER: IOP; Bristol, UK CONF LOCATION: Oiso, Japan; 20-23 Sept. 1981 YEAR: 1982 TREATMENT: X Experimental ABSTRACT: An investigation has been made of long term conductance transients on planar, ion-implanted GaAs, enhancement and depletion mode junction gate FETs (JFETs). Results on JFET devices fabricated with chromium-doped and undoped substrates are compared with results obtained previously on GaAs MESFETs. These long term conductance transients are shown to be minimal on devices fabricated by direct ion implantation into undoped substrates (6 Refs.) DESCRIPTORS: chromium; electric admittance; gallium arsenide; III-V semiconductors; ion implantation; junction gate field effect transistors; transients IDENTIFIERS: enhancement mode junction gate FET; conductance transients; GaAs JFETs; depletion mode junction gate FETs; ion implantation CLASS CODES: B2560S (Other field effect devices) --------------------------------------------------------------------------- Record: 44 RECORD NO.: 1782821 INSPEC Abstract No: A82005362 AUTHOR: Damestani, A.; Forbes, L. CORP SOURCE: Dept. of Electrical & Computer Engng., Univ. of California, Davis, CA, USA TITLE: Characterization of the iron and nickel impurities in GaAs/sub 0.6/P/sub 0.4/ SOURCE: Journal of Electronic Materials, vol.10, no.5, p. 879-86 ISSN: 0361-5235 CODEN: JECMA5 PLACE OF PUBL: USA LANGUAGE: English YEAR: Sept. 1981 TREATMENT: X Experimental ABSTRACT: Characterization of nickel and iron impurity centers in GaAs/sub 0.6/P/sub 0.4/ has been made using the technique of capacitance transients on reverse biased zinc-diffused p/sup +/n diodes. Both the nickel and iron levels have been identified by thermal hole emission having activation energies of 0.3 eV and 0.58 eV, respectively. Relative photoresponse measurements resulted in a threshold for optical hole emission of 0.3 eV and 0.58 eV, therefore, confirming the thermal hole emission measurements. Capture studies for nickel and iron centers indicated a relatively large capture cross-section and a strong electric field dependence (11 Refs.) DESCRIPTORS: capacitance; gallium arsenide; hole traps; III-V semiconductors; impurity electron states; iron; nickel; photocapacitance IDENTIFIERS: Ni impurity centres; Fe impurity centres; III-V semiconductor; reverse biased p/sup +/-n diodes; GaAs/sub 0.6/P/sub 0.4/; capacitance transients; thermal hole emission; activation energies; photoresponse; optical hole emission; capture cross-section; electric field dependence CLASS CODES: A7155F (Impurity and defect levels in tetrahedrally bonded nonmetals); A7240 (Photoconduction and photovoltaic effects; photodielectric effects) --------------------------------------------------------------------------- Record: 45 RECORD NO.: 1755237 INSPEC Abstract No: A81094856; B81047902; C81031716 AUTHOR: Forbes, L.; Tillinghast, J.; Hughes, B.; Li, C. CORP SOURCE: Hewlett-Packard, Santa Rosa, CA, USA TITLE: Automated system for the characterization of high resistivity semiconductors by the van der Pauw method SOURCE: Review of Scientific Instruments, vol.52, no.7, p. 1047-50 ISSN: 0034-6748 CODEN: RSINAK PLACE OF PUBL: USA LANGUAGE: English YEAR: July 1981 TREATMENT: N New Development; P Practical ABSTRACT: An automated system for dark conductivity and Hall measurements and photoconductivity and photo-Hall characterization of high resistivity semiconductors is described. This system has been applied to commercially available semi-insulating GaAs substrates (10 Refs.) DESCRIPTORS: electrical conductivity measurement; gallium arsenide; Hall effect; III-V semiconductors IDENTIFIERS: high resistivity semiconductors; van der Pauw method; dark conductivity; Hall measurements; photoconductivity; photo- Hall characterization; semi-insulating GaAs substrates; III- V semiconductors CLASS CODES: A0750 (Electrical instruments and techniques); B2520D (II-VI and III-V semiconductors); B7210B (Automatic test and measurement systems); B7310J (Impedance and admittance measurement); C3110J (Impedance and admittance control) --------------------------------------------------------------------------- Record: 46 RECORD NO.: 1693916 INSPEC Abstract No: B81028042 AUTHOR: Chang, C.D.; Forbes, L. EDITOR: Rees, G.J. CORP SOURCE: Dept. of Electrical & Computer Engng., Univ. of California, Davis, CA, USA TITLE: Dark capacitance, photocapacitance, dark conductance and photoconductance transients on GaAs MESFETs SOURCE: Semi-Insulating III-V Materials, p. xiii+361, 329-34 PLACE OF PUBL: UK ISBN: 0906812054 LANGUAGE: English PUBLISHER: Shiva Publishing Ltd; Orpington, UK SPONSOR ORG: IOP CONF LOCATION: Nottingham, UK; April 1980 YEAR: 1980 TREATMENT: X Experimental ABSTRACT: The techniques of capacitance and conductance transients have been utilized in the identification of chromium and oxygen in GaAs. A good correspondence has been obtained between thermal emission rate measurements and optical emission rate, or photo-ionization cross-section measurements (11 Refs.) DESCRIPTORS: capacitance; electric admittance; gallium arsenide; III-V semiconductors; photocapacitance; photoionisation; Schottky gate field effect transistors IDENTIFIERS: photocapacitance; dark conductance; photoconductance transients; thermal emission rate measurements; optical emission rate; dark capacitance; GaAs MESFET; photoionisation cross section measurements; Cr identification; O identification CLASS CODES: B2520D (II-VI and III-V semiconductors); B2560S (Other field effect devices) --------------------------------------------------------------------------- Record: 47 RECORD NO.: 1688006 INSPEC Abstract No: A81052519; B81023816 AUTHOR: Jun-Wei Chen; Ko, R.J.; Brzezinski, D.W.; Forbes, L.; Dell'oca, C.J. CORP SOURCE: Hewlett-Packard/CICO, Cupertino, CA, USA TITLE: Bulk traps in silicon-on-sapphire by conductance DLTS SOURCE: IEEE Transactions on Electron Devices, vol.ED-28, no.3, p. 299-304 ISSN: 0018-9383 CODEN: IETDAI PLACE OF PUBL: USA LANGUAGE: English YEAR: March 1981 TREATMENT: N New Development; T Theoretical or Mathematical; X Experimental ABSTRACT: A new deep-level transient spectroscopy (DLTS) technique has been developed for the characterization of deep-level imperfection centers in silicon-on-sapphire (SOS) epitaxial layers, and is based on the use of conductance transients on MOSFETs. Both the distribution of trap levels with energy in the bandgap of silicon and the spatial distribution of levels in the epitaxial film have been obtained. This complete characterization of trapping levels allows process techniques to be developed to control and reduce their concentrations to acceptable levels in SOS technology (17 Refs.) DESCRIPTORS: deep level transient spectroscopy; deep levels; elemental semiconductors; semiconductor epitaxial layers; semiconductor-insulator boundaries; silicon IDENTIFIERS: conductance transients; MOSFETs; trap levels; bandgap; deep level transient spectroscopy technique; SOS epitaxial layers; deep level imperfection centres; spatial distribution; Si; bulk traps CLASS CODES: A7155F (Impurity and defect levels in tetrahedrally bonded nonmetals); B2520C (Elemental semiconductors); B2530F (Metal- insulator-semiconductor structures) --------------------------------------------------------------------------- Record: 48 RECORD NO.: 1609659 INSPEC Abstract No: B81000857 AUTHOR: Anderson, G.F.; Current, K.W.; Forbes, L. CORP SOURCE: Hewlett-Packard Co., Santa Rosa, CA, USA TITLE: The use of non-uniformly doped FETs in GaAs subnanosecond switching circuits: simulations SOURCE: International Journal of Electronics, vol.48, no.5, p. 389- 96 ISSN: 0020-7217 CODEN: IJELA2 PLACE OF PUBL: UK LANGUAGE: English YEAR: May 1980 TREATMENT: A Application; P Practical ABSTRACT: Subnanosecond switching circuits employing a proposed new non-uniformly doped junction field effect transistor (NUDJFET) are simulated and compared to simulated and published experimental test results of similar configurations employing uniformly doped devices. The non- uniform channel doping of the NUDJFET acts to lower its saturation voltage, thus allowing a given circuit configuration to operate at a lower power supply voltage with very little speed degradation and hence a reduced speed- power product. Several important switching circuit configurations are simulated and their speed and power performances compared and evaluated (12 Refs.) DESCRIPTORS: field effect transistor circuits; gallium arsenide; III-V semiconductors; junction gate field effect transistors; semiconductor device models; switching circuits IDENTIFIERS: junction field effect transistor; NUDJFET; subnanosecond switching circuits; GaAs; nonuniformly doped JFET; simulations; III-V semiconductor CLASS CODES: B1290 (Other analogue circuits); B2560B (Semiconductor device modelling and equivalent circuits); B2560S (Other field effect devices) --------------------------------------------------------------------------- Record: 49 RECORD NO.: 1543221 INSPEC Abstract No: B80034944 AUTHOR: Forbes, L.; Sun, E.; Alders, R.; Moll, J. CORP SOURCE: Integrated Circuits Lab., Hewlett-Packard, Palo Alto, CA, USA TITLE: Field induced reemission of electrons trapped in SiO/sub 2/ (IGFET) SOURCE: IEEE Transactions on Electron Devices, vol.ED-26, no.11, p. 1816-18 ISSN: 0018-9383 CODEN: IETDAI PLACE OF PUBL: USA LANGUAGE: English YEAR: Nov. 1979 TREATMENT: X Experimental ABSTRACT: A new form of hot electron injection and trapping in n- channel IGFETs is described, a necessary and sufficient condition for the emission of these trapped electrons is a reset pulse of negative gate and positive drain voltages. The effect of this trapping on device characteristics, reliability, and the proposed low-temperature operation of IGFETs is discussed (10 Refs.) DESCRIPTORS: electron field emission; electron traps; hot carriers; insulated gate field effect transistors IDENTIFIERS: hot electron injection; trapping; n-channel IGFET; trapped electrons; reliability; field induced reemission CLASS CODES: B2560R (Insulated gate field effect transistors) --------------------------------------------------------------------------- Record: 50 RECORD NO.: 1526489 INSPEC Abstract No: A80059920; B80028976 AUTHOR: Chang, C.D.; Damestani, A.; Forbes, L. CORP SOURCE: Dept. of Electrical Engng., Univ. of California, Davis, CA, USA TITLE: Imperfection levels in chromium- and oxygen-doped GaAs SOURCE: Solid-State Electronics, vol.22, no.12, p. 1053-4 ISSN: 0038-1101 CODEN: SSELA5 PLACE OF PUBL: UK LANGUAGE: English YEAR: Dec. 1979 TREATMENT: X Experimental ABSTRACT: Describes an investigation of the behavior of both chromium and oxygen in GaAs using the techniques of dark-capacitance and photo-capacitance transients on reverse-biased diodes to characterize the impurity energy levels (11 Refs.) DESCRIPTORS: chromium; gallium arsenide; III-V semiconductors; impurity electron states; oxygen IDENTIFIERS: GaAs; impurity energy levels; Cr doped; O/sub 2/ doped; dark capacitance transients; photocapacitance transients; reverse biased diodes CLASS CODES: A7155F (Impurity and defect levels in tetrahedrally bonded nonmetals); A7240 (Photoconduction and photovoltaic effects; photodielectric effects); A7280E (Conductivity of III-V and II-VI semiconductors); B2520D (II-VI and III-V semiconductors) --------------------------------------------------------------------------- Record: 51 RECORD NO.: 1504369 INSPEC Abstract No: A80037091; B80017839; C80015399 AUTHOR: Forbes, L.; Kaempf, U. CORP SOURCE: Univ. of California, Davis, CA, USA TITLE: Capacitance and conductance deep-level transient spectroscopy using HP-IB instruments and a desktop computer SOURCE: Hewlett-Packard Journal, vol.30, no.4, p. 29-32 ISSN: 0018-1153 CODEN: HPJOAX PLACE OF PUBL: USA LANGUAGE: English YEAR: April 1979 TREATMENT: A Application; P Practical ABSTRACT: Describes the use of the HP 4271B LCR Meter, which measures both capacitance and conductance, and the HP 9825A Desktop Computer for gating and control in an automated DLTS (deep- level transient spectroscopy) system for both conductance and capacitance transients. Both capacitance and conductance DLTS techniques have been employed at HP Laboratories in the evaluation of bulk and oxide trapping in a wide range of technologies including standard MOSFET, silicon-on-sapphire, light-emitting diodes, and GaAs FETs (12 Refs.) DESCRIPTORS: capacitance measurement; computerised spectroscopy; deep levels; electric admittance measurement; impurity and defect absorption spectra of solids; semiconductor device testing IDENTIFIERS: deep level transient spectroscopy; semiconductor materials testing; capacitance measurement; conductance measurement; computerised spectroscopy; semiconductor device testing CLASS CODES: A0650D (Data gathering, processing, and recording, data displays including digital techniques); A0765 (Optical spectroscopy and spectrometers); B0170E (Production facilities and engineering); B2560 (Semiconductor devices); B7210B (Automatic test and measurement systems); C3380D (Control of physical instruments); C7320 (Physics and chemistry computing) --------------------------------------------------------------------------- Record: 52 RECORD NO.: 1479728 INSPEC Abstract No: B80014383 AUTHOR: Anderson, G.F.; Current, K.W.; Forbes, L. CORP SOURCE: Dept. of Electrical Engng., Univ. of California, Davis, CA, USA TITLE: The use of nonuniformly doped FETs in GaAs subnanosecond switching circuits: simulations SOURCE: Proceedings of the 1979 International Symposium on circuits and systems, p. xxi+1091, 784-7 PLACE OF PUBL: USA LANGUAGE: English PUBLISHER: IEEE; New York, NY, USA SPONSOR ORG: IEEE CONF LOCATION: Tokyo, Japan; 17-19 July 1979 YEAR: 1979 TREATMENT: N New Development; T Theoretical or Mathematical; X Experimental ABSTRACT: Subnanosecond switching circuits employing a proposed new nonuniformly doped junction field effect transistor (NUDJFET) are simulated and compared to simulated and published experimental test results of similar configurations employing uniformly doped devices. The nonuniform channel doping of the NUDJFET acts to lower its saturation voltage, thus allowing a given circuit configuration to operate at a lower power supply voltage with very little speed degradation and hence a reduced speed- power product. Several important switching circuit configurations are simulated and their speed and power performances compared and evaluated (13 Refs.) DESCRIPTORS: gallium arsenide; III-V semiconductors; junction gate field effect transistors; Schottky gate field effect transistors; semiconductor device models; switching circuits IDENTIFIERS: GaAs; simulations; nonuniform channel doping; switching circuit configurations; power performances; sub-ns switching circuits; nonuniformly doped JFETS; reduced saturation voltage; speed performance CLASS CODES: B1265 (Digital electronics); B2520D (II-VI and III-V semiconductors); B2560B (Semiconductor device modelling and equivalent circuits); B2560S (Other field effect devices) --------------------------------------------------------------------------- Record: 53 RECORD NO.: 1396181 INSPEC Abstract No: A79073595; B79038359 AUTHOR: Forbes, L.; Brown, R.; Sheikholeslam, M.; Current, W. CORP SOURCE: Dept. of Electrical Engng., Univ. of California, Davis, CA, USA TITLE: Application of the MOSFET device structure in characterizing imperfection centers in indium-doped silicon SOURCE: Solid-State Electronics, vol.22, no.4, p. 391-7 ISSN: 0038-1101 CODEN: SSELA5 PLACE OF PUBL: UK LANGUAGE: English YEAR: April 1979 TREATMENT: A Application; X Experimental ABSTRACT: This article describes the application of the MOSFET device structure in characterizing impurity centers, this device structure employs the same basic principle as Sah (1976); namely the indirect observation of impurity charge states in a space charge or depletion region. This article specifically demonstrates the utilization of the device in characterizing impurities on substrates which have only a single primary dopant. Specific examples are given for indium-doped silicon such as employed in IR photoconductive detectors (19 Refs.) DESCRIPTORS: deep levels; elemental semiconductors; indium; infrared detectors; insulated gate field effect transistors; silicon IDENTIFIERS: application; MOSFET; device structure; charge states; space charge; depletion region; substrates; single primary dopant; IR photoconductive detectors; Si:In; deep levels; impurity centres CLASS CODES: A7155F (Impurity and defect levels in tetrahedrally bonded nonmetals); A7340Q (Metal-insulator-semiconductor structures)B2520C (Elemental semiconductors); B2560R (Insulated gate field effect transistors); B7230C (Photodetectors) --------------------------------------------------------------------------- Record: 54 RECORD NO.: 1396177 INSPEC Abstract No: B79038354 AUTHOR: Anderson, G.F.; Current, K.W.; Forbes, L. CORP SOURCE: Dept. of Electrical Engng., Univ. of California, Davis, CA, USA TITLE: Assessing GaAs high-speed-switching JFET device models: 1- versus 2-dimensional analysis SOURCE: Proceedings of the IEEE, vol.67, no.3, p. 435 ISSN: 0018-9219 CODEN: IEEPAD PLACE OF PUBL: USA LANGUAGE: English YEAR: March 1979 TREATMENT: G General Review; X Experimental ABSTRACT: The general results and conclusions of these researches and others investigating 1- and 2-dimensional device models for high-speed low-power GaAs switching JFETs are briefly reviewed and summarized. Guidelines for assessing 1- or 2- dimensional device model adequacy based upon device geometers and dopings are proposed (13 Refs.) DESCRIPTORS: field effect integrated circuits; gallium arsenide; junction gate field effect transistors; semiconductor device models IDENTIFIERS: GaAs switching JFETs; assessing 1- or 2-dimensional device model adequacy; device geometers; dopings; high speed switching JFETs CLASS CODES: B2520D (II-VI and III-V semiconductors); B2560B (Semiconductor device modelling and equivalent circuits); B2560S (Other field effect devices); B2570H (Other field effect integrated circuits) --------------------------------------------------------------------------- Record: 55 RECORD NO.: 1105799 INSPEC Abstract No: A77074503; B77038063 AUTHOR: Forbes, L.; Loh, K.W.; Wittmer, L.L. CORP SOURCE: Dept. of Electrical Engng., Univ. of California, Davis, CA, USA TITLE: Characteristics of the indium- and gallium-doped silicon infrared sensing MOSFET's (IRFET's) SOURCE: Jpn. J. Appl. Phys. (Japan), Japanese Journal of Applied Physics, vol.16, suppl.1, p. 267-70 ISSN: 0021-4922 CODEN: JJAPA5 PLACE OF PUBL: Japan LANGUAGE: English SPONSOR ORG: Japan Soc. Applied Phys., Inst. Electrical Engng. Japan, et al CONF TITLE: 1976 International Conference on Solid State Devices CONF LOCATION: Tokyo, Japan; 1-3 Sept. 1976 YEAR: 1977 TREATMENT: P Practical ABSTRACT: The extrinsic silicon infrared sensing MOSFET (IRFET) is an integrated circuit element which has been designed for infrared imaging applications employing large scale integrated arrays, in the near, middle and far infrared wavelength regions. Detailed results have been previously published on the operation of the gold-doped devices in the near infrared wavelength regions. This paper specifically addresses the characterization of the indium-doped and gallium-doped infrared sensing MOSFET in the middle, 3 to 5 micrometer, and far, 8 to 14 micrometer, wavelength regions respectively. Quantum efficiencies in the range 1 to 10.0% and responsivities in the range 1*10/sup 4/ to 1*10/sup 9/ A/J or 1*10/sup 2/ to 1*10/sup 6/ A/W can be obtained (8 Refs.) DESCRIPTORS: field effect integrated circuits; infrared detectors; infrared imaging; insulated gate field effect transistors IDENTIFIERS: integrated circuit element; infrared imaging applications; large scale integrated arrays; responsivities; extrinsic Si IR sensing MOSFET; quantum efficiency; Si:In; Si:Ga; 3 to 5 microns, 8 to 14 microns CLASS CODES: A0762 (Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection)); A7340Q (Metal-insulator-semiconductor structures); B2570F (Other MOS integrated circuits); B4250 (Photoelectric devices); B4270 (Integrated optoelectronics); B7230C (Photodetectors) --------------------------------------------------------------------------- Record: 56 RECORD NO.: 1104386 INSPEC Abstract No: B77036356 AUTHOR: Loh, K.W.; Hawkins, B.M.; Elabd, H.; Forbes, L. CORP SOURCE: Dept. of Electrical Engng. Unit of Arkansas, Fayetteville, AR, USA TITLE: Characteristics of the gallium-doped infrared sensing MOSFET (IRFET) SOURCE: IEEE Transactions on Electron Devices, vol.ED-24, no.8, p. 1041-8 ISSN: 0018-9383 CODEN: IETDAI PLACE OF PUBL: USA LANGUAGE: English YEAR: Aug. 1977 TREATMENT: T Theoretical or Mathematical ABSTRACT: Gallium-doped infrared sensing MOSFET's have been operated in the far infrared, 8- to 14- mu m wavelength region with a quantum efficiency of 2.8 percent and a responsitivity of 3.5*10/sup 3/ A/J. A strong field enhancement has been observed in both thermal and optical emission of holes from the neutral gallium center in silicon. Application considerations in large-scale infrared imaging arrays are discussed (24 Refs.) DESCRIPTORS: infrared detectors; infrared imaging; insulated gate field effect transistors IDENTIFIERS: field enhancement; optical emission; infrared imaging arrays; gallium doped infrared sensing MOSFETS CLASS CODES: B2560R (Insulated gate field effect transistors); B7230C (Photodetectors) --------------------------------------------------------------------------- Record: 57 RECORD NO.: 1020011 INSPEC Abstract No: B77010943 AUTHOR: Wittmer, L.L.; Parker, W.C.; Elabd, H.; Loh, K.W.; Yeargan, J.R.; Forbes, L. CORP SOURCE: Dept. of Electrical Engng., Univ. of Arkansas, Fayetteville, AR, USA TITLE: The infrared sensing MOSFET SOURCE: 1975 International Electron Devices Meeting. (Technical digest), p. xiv+642, 510-13 PLACE OF PUBL: USA LANGUAGE: English PUBLISHER: IEEE; New York, NY, USA SPONSOR ORG: IEEE CONF LOCATION: Washington, DC, USA; 1-3 Dec. 1975 YEAR: 1975 TREATMENT: X Experimental ABSTRACT: Experimental results are presented on the operation of gold- , indium-, and gallium-doped silicon MOSFET's as infrared photon detectors (IRFET's). Photoionization of these impurity centers in the surface space charge depletion region of the MOSFET causes a modulation in the threshold voltage and the conductivity of the MOSFET. Previous results on gold-doped devices have been extended to indium-doped devices and preliminary results obtained on gallium-doped devices. The IRFET exhibits large gains and responsivities of 1.0 milliamp/microwatt (10 milliwatts/microjoule) are easily achieved with indium-doped devices. It is shown that shot noise or background limited rather than l/f noise limited operation can be achieved. By the use of these three dopants, the near, middle, and far infrared wavelength regions can be covered (7 Refs.) DESCRIPTORS: field effect transistors; infrared detectors; random noise IDENTIFIERS: infrared sensing MOSFET; infrared photon detectors; IRFET; surface space charge depletion region; threshold voltage; conductivity; responsivities; shot noise; Au doped; IR detectors; In doped; Ga doped CLASS CODES: B2560S (Other field effect devices); B7230C (Photodetectors) --------------------------------------------------------------------------- Record: 58 RECORD NO.: 1008626 INSPEC Abstract No: B77007670 AUTHOR: Forbes, L.; Wittmer, L.L.; Loh, K.W. CORP SOURCE: Dept. of Electrical Engng., Univ. of California, Davis, CA, USA TITLE: Characteristics of the indium-doped infrared sensing MOSFET (IRFET) SOURCE: IEEE Transactions on Electron Devices, vol.ED-23, no.12, p. 1272-8 ISSN: 0018-9383 CODEN: IETDAI PLACE OF PUBL: USA LANGUAGE: English YEAR: Dec. 1976 ABSTRACT: The operation and characteristics of the indium-doped infrared sensing MOSFET (IRFET) in the 2.0 to 7.0 mu m wavelength range are described. Responsivities of 4.8 mA/ mu J are easily achieved using relatively large devices with small W/L ratios. Determination of the thermal emission rate of the indium center in silicon indicates that operating temperatures of lower than 50K are required. Application considerations in large-scale integrated infrared imaging arrays are discussed. The measurement of the thermal emission rate and photoionization cross section of indium also demonstrates the capability of the MOSFET device structure in characterizing shallower level impurity centers in silicon (21 Refs.) DESCRIPTORS: image sensors; infrared detectors; insulated gate field effect transistors IDENTIFIERS: infrared sensing MOSFET; IRFET; thermal emission rate; infrared imaging arrays; photoionization cross section; In doped; 2.0 to 7.0 microns CLASS CODES: B2560R (Insulated gate field effect transistors); B4250 (Photoelectric devices); B7230C (Photodetectors); B7230G (Image sensors) --------------------------------------------------------------------------- Record: 59 RECORD NO.: 957317 INSPEC Abstract No: A76072555; B76038055 AUTHOR: Hawkins, B.M.; Forbes, L. EDITOR: Buckman, A.B. CORP SOURCE: Dept. of Electrical Engng., Univ. of Arkansas, Fayetteville, AR, USA TITLE: Characteristics of the copper impurity center in GaAs/sub 0.6/P/sub 0.4/ (LED applications) SOURCE: 1976 Region V IEEE Conference Digest on Electrical Engineering for this Decade, p. viii+348, 101-5 PLACE OF PUBL: USA LANGUAGE: English PUBLISHER: IEEE; New York, NY, USA SPONSOR ORG: IEEE CONF LOCATION: Austin, TX, USA; 14-16 April 1976 YEAR: 1976 TREATMENT: X Experimental ABSTRACT: Characterization of the copper impurity center in GaAs/sub 0.6/P/sub 0.4/ has been made using the technique of capacitance transients. Three acceptor levels have been identified by thermal hole emission having ionization energies of 0.43 eV, 0.24 eV, and 0.14 eV. Relative photoresponse and hole capture cross section studies have also been made (20 Refs.) DESCRIPTORS: copper; gallium arsenide; gallium compounds; III-V semiconductors; impurity electron states and effects IDENTIFIERS: GaAs/sub 0.6/P/sub 0.4/; thermal hole emission; ionization energies; 0.43 eV; 0.24 eV; 0.14 eV; photoresponse; hole capture cross section; Cu impurity centre characteristic; LED CLASS CODES: A7155 (Impurity and defect levels); B4260 (Electroluminescent devices) --------------------------------------------------------------------------- Record: 60 RECORD NO.: 879523 INSPEC Abstract No: A76027012; B76012776 AUTHOR: Hawkins, B.M.; Forbes, L. CORP SOURCE: Dept. of Electrical Engng., Univ. of Arkansas, Fayetteville, AR, USA TITLE: Identification of copper energy levels in GaAs/sub 0.6/P/sub 0.4/ (LED performance) SOURCE: Applied Physics Letters, vol.27, no.12, p. 695-7 ISSN: 0003-6951 CODEN: APPLAB PLACE OF PUBL: USA LANGUAGE: English YEAR: 15 Dec. 1975 TREATMENT: X Experimental ABSTRACT: The capacitance transient technique carried out on reverse- biased diodes enabling the thermal emission of holes to be observed enables four copper levels to be identified at 0.43, 0.24, 0.13 and 0.033 eV from the valence band. The 0.43 eV level was confirmed by observation of optical emission of electrons which were also observed from the 0.24 and 0.13 eV levels. The results can be used to explain earlier measurements by other workers on GaAs and on mixed crystals (22 Refs.) DESCRIPTORS: copper; gallium arsenide; III-V semiconductors; impurity electron states and effects; light emitting diodes; p-n homojunctions IDENTIFIERS: capacitance transient technique; valence band; 0.43 eV level; impurity energy levels; GaAs/sub 0.6/P/sub 0.4/:Cu; optical electron emission; reverse biased diodes; thermal hole emission CLASS CODES: A7155 (Impurity and defect levels); A7340L (Semiconductor-to- semiconductor contacts, p-n junctions, and heterojunctions); B0510 (Crystal growth); B2530B (Semiconductor junctions); B2550B (Semiconductor doping); B4260D (Light emitting diodes)